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Use of mist chemical vapor deposition to impart ferroelectric properties to ε-Ga2O3 thin films on SnO2/c-sapphire substrates
Use of mist chemical vapor deposition to impart ferroelectric properties to ε-Ga2O3 thin films on SnO2/c-sapphire substrates
Use of mist chemical vapor deposition to impart ferroelectric properties to ε-Ga2O3 thin films on SnO2/c-sapphire substrates
Tahara, Daisuke (Autor:in) / Nishinaka, Hiroyuki (Autor:in) / Noda, Minoru (Autor:in) / Yoshimoto, Masahiro (Autor:in)
MATERIALS LETTERS ; 232 ; 47-50
01.01.2018
4 pages
Aufsatz (Zeitschrift)
Unbekannt
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