Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application: Fid-Bau Portal

Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

Sun, Haiding / Park, Young Jae / Li, Kuang-Hui / Liu, Xinwei / Detchprohm, Theeradetch / Zhang, Xixiang / Dupuis, Russell D. / Li, Xiaohang

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Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

Sun, Haiding / Park, Young Jae / Li, Kuang-Hui / Liu, Xinwei / Detchprohm, Theeradetch / Zhang, Xixiang / Dupuis, Russell D. / Li, Xiaohang

Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

Sun, Haiding / Park, Young Jae / Li, Kuang-Hui / Liu, Xinwei / Detchprohm, Theeradetch / Zhang, Xixiang / Dupuis, Russell D. / Li, Xiaohang

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Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Ähnliche Titel

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Titel:

Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

Beteiligte:

Sun, Haiding (Autor:in) / Park, Young Jae (Autor:in) / Li, Kuang-Hui (Autor:in) / Liu, Xinwei (Autor:in) / Detchprohm, Theeradetch (Autor:in) / Zhang, Xixiang (Autor:in) / Dupuis, Russell D. (Autor:in) / Li, Xiaohang (Autor:in)

Erschienen in:

Applied surface science ; 458 ; 949-953

Erscheinungsdatum:

01.01.2018

Format / Umfang:

5 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.44

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