Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs): Fid-Bau Portal

Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Güçlü, Ç.Ş. / Özdemir, A.F. / Karabulut, A. / Kökce, A. / Altındal, Ş.

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Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Güçlü, Ç.Ş. / Özdemir, A.F. / Karabulut, A. / Kökce, A. / Altındal, Ş.

Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Güçlü, Ç.Ş. / Özdemir, A.F. / Karabulut, A. / Kökce, A. / Altındal, Ş.

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Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Ähnliche Titel

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Dokumentinformationen

Titel:

Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Beteiligte:

Güçlü, Ç.Ş. (Autor:in) / Özdemir, A.F. (Autor:in) / Karabulut, A. (Autor:in) / Kökce, A. (Autor:in) / Altındal, Ş. (Autor:in)

Erschienen in:

Materials science in semiconductor processing ; 89 ; 26-31

Erscheinungsdatum:

01.01.2019

Format / Umfang:

6 pages

ISSN:

1369-8001

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.38152

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