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Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)
Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)
Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)
Güçlü, Ç.Ş. (author) / Özdemir, A.F. (author) / Karabulut, A. (author) / Kökce, A. (author) / Altındal, Ş. (author)
Materials science in semiconductor processing ; 89 ; 26-31
2019-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
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