Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature

Tsuji, T. / Kinoshita, A. / Iwamuro, N. et al. | British Library Online Contents | 2012

The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)

Yuan, H. / Tang, X.Y. / Zhang, Y.M. et al. | British Library Online Contents | 2014

The temperature dependent analysis of Au/TiO"2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics

Kinaci, B. / Sebnem Cetin, S. / Bengi, A. et al. | British Library Online Contents | 2012

Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs

Fukuda, K. / Kinoshita, A. / Ohyanagi, T. et al. | British Library Online Contents | 2010

Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Güçlü, Ç.Ş. / Özdemir, A.F. / Karabulut, A. et al. | British Library Online Contents | 2019