Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC: Fid-Bau Portal

Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

Tunhuma, Shandirai M. / Auret, F.D. / Legodi, M.J. / Nel, J. / Diale, M.

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Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

Tunhuma, Shandirai M. / Auret, F.D. / Legodi, M.J. / Nel, J. / Diale, M.

Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

Tunhuma, Shandirai M. / Auret, F.D. / Legodi, M.J. / Nel, J. / Diale, M.

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Titel:

Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

Beteiligte:

Tunhuma, Shandirai M. (Autor:in) / Auret, F.D. (Autor:in) / Legodi, M.J. (Autor:in) / Nel, J. (Autor:in) / Diale, M. (Autor:in)

Erschienen in:

Materials science in semiconductor processing ; 81 ; 122-126

Erscheinungsdatum:

01.01.2018

Format / Umfang:

5 pages

ISSN:

1369-8001

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.38152

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