Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
Omotoso, E. (Autor:in) / Meyer, W.E. (Autor:in) / Coelho, S.M.M. (Autor:in) / Diale, M. (Autor:in) / Ngoepe, P.N.M. (Autor:in) / Auret, F.D. (Autor:in)
Materials science in semiconductor processing ; 51 ; 20-24
01.01.2016
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2006
|British Library Online Contents | 2016
|British Library Online Contents | 1997
|British Library Online Contents | 2019
|British Library Online Contents | 2018
|