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Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature
Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature
Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature
Lin, Guangyang (Autor:in) / Liang, Dongxue (Autor:in) / Wang, Jiaqi (Autor:in) / Yu, Chunyu (Autor:in) / Li, Cheng (Autor:in) / Chen, Songyan (Autor:in) / Huang, Wei (Autor:in) / Wang, Jianyuan (Autor:in) / Xu, Jianfang (Autor:in)
Materials science in semiconductor processing ; 97 ; 56-61
01.01.2019
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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