Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature: Fid-Bau Portal

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Lin, Guangyang / Liang, Dongxue / Wang, Jiaqi / Yu, Chunyu / Li, Cheng / Chen, Songyan / Huang, Wei / Wang, Jianyuan / Xu, Jianfang

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Lin, Guangyang / Liang, Dongxue / Wang, Jiaqi / Yu, Chunyu / Li, Cheng / Chen, Songyan / Huang, Wei / Wang, Jianyuan / Xu, Jianfang

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Lin, Guangyang / Liang, Dongxue / Wang, Jiaqi / Yu, Chunyu / Li, Cheng / Chen, Songyan / Huang, Wei / Wang, Jianyuan / Xu, Jianfang

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature

Contributors:

Lin, Guangyang (author) / Liang, Dongxue (author) / Wang, Jiaqi (author) / Yu, Chunyu (author) / Li, Cheng (author) / Chen, Songyan (author) / Huang, Wei (author) / Wang, Jianyuan (author) / Xu, Jianfang (author)

Published in:

Materials science in semiconductor processing ; 97 ; 56-61

Publication date:

2019-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

Lin, Guangyang / Lan, Xiaoling / Chen, Ningli et al. | British Library Online Contents | 2016

Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure

Ye, Lin / Zhang, Miao / Xue, Zhongyin et al. | British Library Online Contents | 2015

Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure

Ye, L. / Zhang, M. / Xue, Z. et al. | British Library Online Contents | 2015

Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensation

Boureau, Victor / Benoit, Daniel / Warot, Bénédicte et al. | British Library Online Contents | 2016

Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

Ma, X. / Liu, W. / Chen, C. et al. | British Library Online Contents | 2009