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An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET
An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET
An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET
Mohanty, Soumya S. (Autor:in) / Mishra, Sikha (Autor:in) / Sathpathy, Debatanaya (Autor:in) / Mishra, Guru Prasad (Autor:in)
ICICCT ; 2019 ; Hyderabad
2020
Aufsatz (Konferenz)
Englisch
DDC:
658.56
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