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An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET
Abstract Double Gate Metal Oxide Semiconductor Field Effect Transistors (DGMOSFET) have one of the emerged potential contenders in CMOS VLSI technology due to the fast switching applications. In this proposed work the implementation of symmetrical work function variation of the dual material (SWVDM) at the source end of In0.53Ga0.47As/InP DG MOSFET using 2D Sentaurus TCAD device simulator. The high-K HfO2 is used in order to minimize the leakage. Simulation result reveals the excellent analog performance metrics like drive current, On resistance, and transconductance as compared to single material (SM) In0.53Ga0.47As/InP DG hetero MOSFET.
An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET
Abstract Double Gate Metal Oxide Semiconductor Field Effect Transistors (DGMOSFET) have one of the emerged potential contenders in CMOS VLSI technology due to the fast switching applications. In this proposed work the implementation of symmetrical work function variation of the dual material (SWVDM) at the source end of In0.53Ga0.47As/InP DG MOSFET using 2D Sentaurus TCAD device simulator. The high-K HfO2 is used in order to minimize the leakage. Simulation result reveals the excellent analog performance metrics like drive current, On resistance, and transconductance as compared to single material (SM) In0.53Ga0.47As/InP DG hetero MOSFET.
An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET
Mohanty, Soumya S. (Autor:in) / Mishra, Sikha (Autor:in) / Sathpathy, Debatanaya (Autor:in) / Mishra, Guru Prasad (Autor:in)
28.06.2019
7 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
Phase Formation in the Course of Oxidation of InxSe1 - x Alloys (0.47 x <= 0.53)
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