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Sputtering target for forming transparent oxide film and method for producing same
Provided is a sputtering target for forming a zinc oxide-based transparent oxide film, which is capable of forming a transparent oxide film by direct current sputtering, while being free from the occurrence of abnormal discharge. This sputtering target for forming a transparent oxide film is characterized by being a fired body of a composition that contains 0.6-8.0 at% of Al and/or Ga and 0.1 at% or more of Si so that the total of Al, Ga and Si is 33.0 at% or less relative to the total amount of all the metal elements, with the balance made up of Zn and unavoidable impurities. This sputtering target for forming a transparent oxide film is also characterized in that complex oxide particles of Zn and Si, which have particle diameters of 5 [mu]m or less, are present in the fired body.
Sputtering target for forming transparent oxide film and method for producing same
Provided is a sputtering target for forming a zinc oxide-based transparent oxide film, which is capable of forming a transparent oxide film by direct current sputtering, while being free from the occurrence of abnormal discharge. This sputtering target for forming a transparent oxide film is characterized by being a fired body of a composition that contains 0.6-8.0 at% of Al and/or Ga and 0.1 at% or more of Si so that the total of Al, Ga and Si is 33.0 at% or less relative to the total amount of all the metal elements, with the balance made up of Zn and unavoidable impurities. This sputtering target for forming a transparent oxide film is also characterized in that complex oxide particles of Zn and Si, which have particle diameters of 5 [mu]m or less, are present in the fired body.
Sputtering target for forming transparent oxide film and method for producing same
SAITO ATSUSHI (Autor:in) / ZHANG SHOUBIN (Autor:in) / YAMAGUCHI GOU (Autor:in) / KONDO YUICHI (Autor:in)
22.04.2015
Patent
Elektronische Ressource
Englisch
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