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Preparation method of lead zirconate titanate (PTZ) ferroelectric film
The invention relates to the field of the preparative technology of ferroelectric films and devices and in particular relates to a preparation method of a lead zirconate titanate (PTZ) ferroelectric film. Solution modification and ultraviolet radiation are combined to reduce the sintering temperature of the film to be below 500 DEG C, the defects that the existing PZT ferroelectric film has high sintering temperature and the Pb element can be volatized easily are overcome and the purpose of compatibility with a Si integration circuit is achieved. The preparation method comprises the following steps: (1) preparing a precursor solution; (2) preparing a gel film; (3) carrying out pretreatment on the PZT gel film; and (4) performing ultimate treatment on a PZT precursor film.
Preparation method of lead zirconate titanate (PTZ) ferroelectric film
The invention relates to the field of the preparative technology of ferroelectric films and devices and in particular relates to a preparation method of a lead zirconate titanate (PTZ) ferroelectric film. Solution modification and ultraviolet radiation are combined to reduce the sintering temperature of the film to be below 500 DEG C, the defects that the existing PZT ferroelectric film has high sintering temperature and the Pb element can be volatized easily are overcome and the purpose of compatibility with a Si integration circuit is achieved. The preparation method comprises the following steps: (1) preparing a precursor solution; (2) preparing a gel film; (3) carrying out pretreatment on the PZT gel film; and (4) performing ultimate treatment on a PZT precursor film.
Preparation method of lead zirconate titanate (PTZ) ferroelectric film
SUN YUYU (Autor:in) / CHEN YUANQING (Autor:in) / GUO QIAOQIN (Autor:in)
29.04.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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