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    Oxide sintered body and sputtering target

    Neue Suche nach: TAO YUKI
    Neue Suche nach: KANAMARU MORIYOSHI
    Neue Suche nach: NAMBU AKIRA
    Neue Suche nach: HATA HIDEO

    An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and X-ray diffraction of the oxide sintered body shows that a Zn2SnO4 phase and an InGaZnO4 phase are contained in a prescribed proportion.

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    Oxide sintered body and sputtering target

    Neue Suche nach: TAO YUKI
    Neue Suche nach: KANAMARU MORIYOSHI
    Neue Suche nach: NAMBU AKIRA
    Neue Suche nach: HATA HIDEO

    An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and X-ray diffraction of the oxide sintered body shows that a Zn2SnO4 phase and an InGaZnO4 phase are contained in a prescribed proportion.

    Zugriff

    Download

    Oxide sintered body and sputtering target

    Neue Suche nach: TAO YUKI
    Neue Suche nach: KANAMARU MORIYOSHI
    Neue Suche nach: NAMBU AKIRA
    Neue Suche nach: HATA HIDEO

    An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and X-ray diffraction of the oxide sintered body shows that a Zn2SnO4 phase and an InGaZnO4 phase are contained in a prescribed proportion.

    Zugriff

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    Zugriff

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    Ähnliche Titel

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    Dokumentinformationen
    Titel:

    Oxide sintered body and sputtering target

    Beteiligte:

    TAO YUKI (Autor:in) / KANAMARU MORIYOSHI (Autor:in) / NAMBU AKIRA (Autor:in) / HATA HIDEO (Autor:in)

    Erscheinungsdatum:

    13.05.2015

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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