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Zinc oxide piezoresistor medium material and chip resistor preparation method
The invention discloses a zinc oxide piezoresistor medium material and a chip resistor preparation method. The zinc oxide piezoresistor medium material is prepared from a formula comprising more than two oxides which are added into a lead-free formula and a cadmium-free formula by taking zinc oxide as a main raw material, wherein the oxides comprise Bi2O3, CoO, MnO, Sb2O3, Cr2O3, TiO2, SrO, In2O3, NiO, ZrO2 and SiO2. The zinc oxide piezoresistor medium material is suitable for preparing the sheet zinc oxide piezoresistor. The sheet zinc oxide piezoresistor prepared by using the medium material has excellent electrical property characteristics of a wide voltage range (200V/mm-1200V/mm) under a specified current, a high nonlinear coefficient (48-80) and a small leak current (0.2-1.0 [mu]A). The sintering temperature range is 850-1160 DEG C. In a preparation process, a multi-layered sheet capacitor production and fabrication technology is adopted. The process is simple and easy to control and convenient to implement low-cost industrialized production.
Zinc oxide piezoresistor medium material and chip resistor preparation method
The invention discloses a zinc oxide piezoresistor medium material and a chip resistor preparation method. The zinc oxide piezoresistor medium material is prepared from a formula comprising more than two oxides which are added into a lead-free formula and a cadmium-free formula by taking zinc oxide as a main raw material, wherein the oxides comprise Bi2O3, CoO, MnO, Sb2O3, Cr2O3, TiO2, SrO, In2O3, NiO, ZrO2 and SiO2. The zinc oxide piezoresistor medium material is suitable for preparing the sheet zinc oxide piezoresistor. The sheet zinc oxide piezoresistor prepared by using the medium material has excellent electrical property characteristics of a wide voltage range (200V/mm-1200V/mm) under a specified current, a high nonlinear coefficient (48-80) and a small leak current (0.2-1.0 [mu]A). The sintering temperature range is 850-1160 DEG C. In a preparation process, a multi-layered sheet capacitor production and fabrication technology is adopted. The process is simple and easy to control and convenient to implement low-cost industrialized production.
Zinc oxide piezoresistor medium material and chip resistor preparation method
SONG YUANQIANG (Autor:in) / YOU QINLU (Autor:in)
25.11.2015
Patent
Elektronische Ressource
Englisch
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