Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Zinc oxide piezoresistor material with high electric potential gradient
The invention discloses a zinc oxide piezoresistor material with a high electric potential gradient and belongs to the field of semiconductor electronic materials. The zinc oxide piezoresistor material is characterized in that nanoscale zinc oxide is taken as a main body, is added with micron-sized additives including bismuth oxide, antimony oxide, chromic oxide and cobalt oxide, is also added with a trace amount of manganese dioxide and 2-3 types of rare-earth oxides; all the components are fully mixed, dried, pre-roasted, granulated, compression-molded and then subjected to low-temperature glue discharging and high-temperature sintering to prepare a zinc oxide resistor valve plate, wherein the zinc oxide resistor valve plate is small in average grain size (less than 4 microns), has an electric potential gradient between 750V/mm and 1150V/mm, has a nonlinear coefficient being greater than 25, has leak current being smaller than 5 microamps and also has excellent electrical properties.
Zinc oxide piezoresistor material with high electric potential gradient
The invention discloses a zinc oxide piezoresistor material with a high electric potential gradient and belongs to the field of semiconductor electronic materials. The zinc oxide piezoresistor material is characterized in that nanoscale zinc oxide is taken as a main body, is added with micron-sized additives including bismuth oxide, antimony oxide, chromic oxide and cobalt oxide, is also added with a trace amount of manganese dioxide and 2-3 types of rare-earth oxides; all the components are fully mixed, dried, pre-roasted, granulated, compression-molded and then subjected to low-temperature glue discharging and high-temperature sintering to prepare a zinc oxide resistor valve plate, wherein the zinc oxide resistor valve plate is small in average grain size (less than 4 microns), has an electric potential gradient between 750V/mm and 1150V/mm, has a nonlinear coefficient being greater than 25, has leak current being smaller than 5 microamps and also has excellent electrical properties.
Zinc oxide piezoresistor material with high electric potential gradient
ZHU DACHUAN (Autor:in) / YANG CHEN (Autor:in) / TU MINGJING (Autor:in)
01.04.2015
Patent
Elektronische Ressource
Englisch
Manufacturing method of energy type ultrahigh-gradient zinc oxide piezoresistor
Europäisches Patentamt | 2020
|Preparation method of medium-voltage gradient zinc oxide piezoresistor MOV chip
Europäisches Patentamt | 2020
|Zinc oxide piezoresistor medium material and chip resistor preparation method
Europäisches Patentamt | 2015
|Zinc oxide piezoresistor dielectric material and preparation method thereof
Europäisches Patentamt | 2016
|Preparation method of high-compactness zinc oxide piezoresistor chip
Europäisches Patentamt | 2021
|