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High-purity and high-density recrystallized silicon carbide device and preparation method thereof
The invention relates to a high-purity and high-density recrystallized silicon carbide device and a preparation method thereof and belongs to the technical field of high-purity and high-density silicon carbide ceramic preparation. SiC blanks with the apparent porosity larger than or equal to 10% serve as raw materials, the raw materials are placed in steeping liquor, steeping is performed, and the steeped blanks are obtained; the steeped blanks are cured and sintered; steeping, curing and sintering are repeated for at least three times; temperature is raised to 1470-1550 DEG C, and Si-C reaction is performed; then the temperature is raised to 2350-2400 DEG C; recrystallization reaction is performed, and recrystallization products are obtained for the first time; cyclic operation that Si-C reaction and recrystallization reaction are performed one time sequentially after steeping, curing and sintering are repeated for at least three times is performed till finished products with the density larger than or equal to 2.95 g/cm<3> and the apparent porosity smaller than or equal to 2% are obtained.
High-purity and high-density recrystallized silicon carbide device and preparation method thereof
The invention relates to a high-purity and high-density recrystallized silicon carbide device and a preparation method thereof and belongs to the technical field of high-purity and high-density silicon carbide ceramic preparation. SiC blanks with the apparent porosity larger than or equal to 10% serve as raw materials, the raw materials are placed in steeping liquor, steeping is performed, and the steeped blanks are obtained; the steeped blanks are cured and sintered; steeping, curing and sintering are repeated for at least three times; temperature is raised to 1470-1550 DEG C, and Si-C reaction is performed; then the temperature is raised to 2350-2400 DEG C; recrystallization reaction is performed, and recrystallization products are obtained for the first time; cyclic operation that Si-C reaction and recrystallization reaction are performed one time sequentially after steeping, curing and sintering are repeated for at least three times is performed till finished products with the density larger than or equal to 2.95 g/cm<3> and the apparent porosity smaller than or equal to 2% are obtained.
High-purity and high-density recrystallized silicon carbide device and preparation method thereof
XUE SHANYAN (Autor:in) / JIANG JUNJUN (Autor:in) / DENG HUAFENG (Autor:in) / ZHANG XIYAN (Autor:in)
13.01.2016
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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