Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-purity high-density silicon carbide ceramic and manufacturing method thereof
The invention discloses a high-purity high-density silicon carbide ceramic and a preparation method thereof, silicon carbide ceramic powder with different particle sizes is used as a main raw material, graphite powder and nano carbon black are used as binders, resin is used as a binder, a spray granulation process is used for uniform mixing. The preparation method comprises the following steps: carrying out dry pressing molding, isostatic pressing molding or casting molding to obtain a ceramic green body, drying and curing the green body, carrying out primary high-temperature purification heattreatment and secondary reaction siliconizing heat treatment, and finally carrying out surface treatment to obtain the high-purity high-density silicon carbide ceramic. The silicon carbide ceramic prepared by the process is high in purity, the content of various metal impurities is lower than 200 ppm, the density of the material reaches 99% or above, and the silicon carbide ceramic can be widelyapplied to the application fields of photovoltaics, LEDs or semiconductors with high purity and strength requirements.
本发明公开了一种高纯高致密碳化硅陶瓷及其制造方法，采用不同粒度的碳化硅陶瓷粉体为主要原料，利用石墨粉和纳米炭黑为结合剂，树脂为粘结剂，采用喷雾造粒工艺均匀混合，通过干压成型、等静压成型或者浇注成型等多种成型方法得到陶瓷素胚，坯体经过干燥、固化后，采用第一次高温纯化热处理，第二次反应渗硅热处理，最后经过表面处理，获得高纯高致密碳化硅陶瓷。采用该工艺制造的碳化硅陶瓷纯度高，各种金属杂质含量低于200ppm，材料的致密度达99％以上，能够广泛应用于纯度和强度要求高的光伏、LED或者半导体应用领域。
High-purity high-density silicon carbide ceramic and manufacturing method thereof
The invention discloses a high-purity high-density silicon carbide ceramic and a preparation method thereof, silicon carbide ceramic powder with different particle sizes is used as a main raw material, graphite powder and nano carbon black are used as binders, resin is used as a binder, a spray granulation process is used for uniform mixing. The preparation method comprises the following steps: carrying out dry pressing molding, isostatic pressing molding or casting molding to obtain a ceramic green body, drying and curing the green body, carrying out primary high-temperature purification heattreatment and secondary reaction siliconizing heat treatment, and finally carrying out surface treatment to obtain the high-purity high-density silicon carbide ceramic. The silicon carbide ceramic prepared by the process is high in purity, the content of various metal impurities is lower than 200 ppm, the density of the material reaches 99% or above, and the silicon carbide ceramic can be widelyapplied to the application fields of photovoltaics, LEDs or semiconductors with high purity and strength requirements.
本发明公开了一种高纯高致密碳化硅陶瓷及其制造方法，采用不同粒度的碳化硅陶瓷粉体为主要原料，利用石墨粉和纳米炭黑为结合剂，树脂为粘结剂，采用喷雾造粒工艺均匀混合，通过干压成型、等静压成型或者浇注成型等多种成型方法得到陶瓷素胚，坯体经过干燥、固化后，采用第一次高温纯化热处理，第二次反应渗硅热处理，最后经过表面处理，获得高纯高致密碳化硅陶瓷。采用该工艺制造的碳化硅陶瓷纯度高，各种金属杂质含量低于200ppm，材料的致密度达99％以上，能够广泛应用于纯度和强度要求高的光伏、LED或者半导体应用领域。
High-purity high-density silicon carbide ceramic and manufacturing method thereof
一种高纯高致密碳化硅陶瓷及其制造方法
YAN YONGJIE (Autor:in)
01.01.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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