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Novel ferroelectric semiconductor solid electrolyte material, preparation method and applications thereof
The invention discloses a novel ferroelectric semiconductor solid electrolyte material, a preparation method and applications thereof, and belongs to the technical field of electronic information materials and components. The preparation method comprises the following steps: respectively weighing and mixing chemical raw materials ZnO and Fe2O3 with purities of greater than 99.9% according to a chemical formula of Zn2Fe3O7; carrying out ball milling, drying and sieving to obtain powder; and tabletting the powder, and roasting the tabletted powder for 2-6 hours at a temperature of 1100-1300 DEGC to obtain the novel ferroelectric semiconductor solid electrolyte material. According to the invention, based on a layered oxygen vacancy material design mechanism, the novel ferroelectric semiconductor solid electrolyte material Zn2Fe3O7 is developed by adopting a traditional solid-phase method, has ferroelectricity, semiconductor characteristics and ionic conductivity at the same time, and canbe widely applied to the fields of integrated circuits, solid-state batteries and the like; and the preparation method is simple to operate and low in cost and has good industrial application potential.
本发明公开了一种新型铁电半导体固体电解质材料及其制备方法与应用，属于电子信息材料与元器件技术领域。本发明通过将纯度大于99.9％的化学原料ZnO、FeO分别按ZnFeO化学式称量混合，随后经球磨、烘干与过筛得到粉料，将粉料压片，并将压片于1100℃～1300℃的条件下焙烧2～6小时，即得新型铁电半导体固体电解质材料。本发明基于层状氧空位材料设计机理，采用传统固相法研制出一种新型铁电半导体固体电解质材料ZnFeO，该材料同时具有铁电性、半导体特性以及离子导电性，可广泛应用于集成电路、固态电池等领域，且该制备方法操作简单、成本低廉，具有良好的工业化应用潜力。
Novel ferroelectric semiconductor solid electrolyte material, preparation method and applications thereof
The invention discloses a novel ferroelectric semiconductor solid electrolyte material, a preparation method and applications thereof, and belongs to the technical field of electronic information materials and components. The preparation method comprises the following steps: respectively weighing and mixing chemical raw materials ZnO and Fe2O3 with purities of greater than 99.9% according to a chemical formula of Zn2Fe3O7; carrying out ball milling, drying and sieving to obtain powder; and tabletting the powder, and roasting the tabletted powder for 2-6 hours at a temperature of 1100-1300 DEGC to obtain the novel ferroelectric semiconductor solid electrolyte material. According to the invention, based on a layered oxygen vacancy material design mechanism, the novel ferroelectric semiconductor solid electrolyte material Zn2Fe3O7 is developed by adopting a traditional solid-phase method, has ferroelectricity, semiconductor characteristics and ionic conductivity at the same time, and canbe widely applied to the fields of integrated circuits, solid-state batteries and the like; and the preparation method is simple to operate and low in cost and has good industrial application potential.
本发明公开了一种新型铁电半导体固体电解质材料及其制备方法与应用，属于电子信息材料与元器件技术领域。本发明通过将纯度大于99.9％的化学原料ZnO、FeO分别按ZnFeO化学式称量混合，随后经球磨、烘干与过筛得到粉料，将粉料压片，并将压片于1100℃～1300℃的条件下焙烧2～6小时，即得新型铁电半导体固体电解质材料。本发明基于层状氧空位材料设计机理，采用传统固相法研制出一种新型铁电半导体固体电解质材料ZnFeO，该材料同时具有铁电性、半导体特性以及离子导电性，可广泛应用于集成电路、固态电池等领域，且该制备方法操作简单、成本低廉，具有良好的工业化应用潜力。
Novel ferroelectric semiconductor solid electrolyte material, preparation method and applications thereof
一种新型铁电半导体固体电解质材料及其制备方法与应用
LIAO QINGWEI (Autor:in) / ZHANG JINGXIN (Autor:in) / LIAO KEXUAN (Autor:in) / LEI OU (Autor:in) / QIN LEI (Autor:in) / WANG LIKUN (Autor:in)
17.04.2020
Patent
Elektronische Ressource
Chinesisch
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