Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-strength multilayer ceramic co-fired structure and preparation method thereof
The invention relates to the field of ceramic chips, in particular to a high-strength multilayer ceramic co-fired structure and a preparation method thereof. The ceramic co-fired structure comprises an aluminum oxide layer I, an aluminum oxide layer II and a zirconium oxide layer, wherein the zirconium oxide layer is fixed between the aluminum oxide layer I and the aluminum oxide layer II; the aluminum oxide layer I and the aluminum oxide layer II are each composed of, by weight, 100 parts of aluminum oxide powder, 0-0.4 part of zirconium dioxide powder and 0-0.6 part of silicon dioxide powder. The zirconium oxide layer is prepared from the following components in parts by weight: 100 parts of 5YSZ zirconium oxide powder and 3 to 10 parts of aluminum oxide powder. The multilayer ceramic co-fired structure comprises the alumina layer I, the alumina layer II, and the zirconia layer in the middle, wherein the alumina layer I and the alumina layer II are an upper surface layer and a lowersurface layer respectively. By optimizing the components of the zirconium oxide layer, the structure of the multilayer co-fired ceramic and the sintering process, the defect proportion in a chip is reduced, and the strength and the toughness are improved.
本发明涉及陶瓷芯片领域，尤其是高强度多层陶瓷共烧结构及其制备方法。该陶瓷共烧结构包括氧化铝层一、氧化铝层二和氧化锆层，所述氧化锆层固定在氧化铝层一和氧化铝层二之间；氧化铝层一和氧化铝层二均由如下重量份数的组分组成：氧化铝粉100份、二氧化锆粉0‑0.4份、二氧化硅粉0‑0.6份；氧化锆层由如下重量份数的组分组成：5YSZ氧化锆粉100份、氧化铝粉3‑10份。本发明包括上下两面表层的氧化铝层一和氧化铝层二及中间的氧化锆层。在优化氧化锆层成分的基础上通过优化多层共烧陶瓷的结构，及烧结工艺，降低芯片中缺陷比例，提高强度和韧性。
High-strength multilayer ceramic co-fired structure and preparation method thereof
The invention relates to the field of ceramic chips, in particular to a high-strength multilayer ceramic co-fired structure and a preparation method thereof. The ceramic co-fired structure comprises an aluminum oxide layer I, an aluminum oxide layer II and a zirconium oxide layer, wherein the zirconium oxide layer is fixed between the aluminum oxide layer I and the aluminum oxide layer II; the aluminum oxide layer I and the aluminum oxide layer II are each composed of, by weight, 100 parts of aluminum oxide powder, 0-0.4 part of zirconium dioxide powder and 0-0.6 part of silicon dioxide powder. The zirconium oxide layer is prepared from the following components in parts by weight: 100 parts of 5YSZ zirconium oxide powder and 3 to 10 parts of aluminum oxide powder. The multilayer ceramic co-fired structure comprises the alumina layer I, the alumina layer II, and the zirconia layer in the middle, wherein the alumina layer I and the alumina layer II are an upper surface layer and a lowersurface layer respectively. By optimizing the components of the zirconium oxide layer, the structure of the multilayer co-fired ceramic and the sintering process, the defect proportion in a chip is reduced, and the strength and the toughness are improved.
本发明涉及陶瓷芯片领域，尤其是高强度多层陶瓷共烧结构及其制备方法。该陶瓷共烧结构包括氧化铝层一、氧化铝层二和氧化锆层，所述氧化锆层固定在氧化铝层一和氧化铝层二之间；氧化铝层一和氧化铝层二均由如下重量份数的组分组成：氧化铝粉100份、二氧化锆粉0‑0.4份、二氧化硅粉0‑0.6份；氧化锆层由如下重量份数的组分组成：5YSZ氧化锆粉100份、氧化铝粉3‑10份。本发明包括上下两面表层的氧化铝层一和氧化铝层二及中间的氧化锆层。在优化氧化锆层成分的基础上通过优化多层共烧陶瓷的结构，及烧结工艺，降低芯片中缺陷比例，提高强度和韧性。
High-strength multilayer ceramic co-fired structure and preparation method thereof
高强度多层陶瓷共烧结构及其制备方法
WU XIYONG (Autor:in) / PU JIAN (Autor:in) / FENG WENCHAO (Autor:in) / FENG JIANGTAO (Autor:in)
03.07.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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