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Silicon-based temperature-stable type microwave dielectric ceramic material and preparation method thereof
The invention discloses a silicon-based temperature-stable type microwave dielectric ceramic material and a preparation method thereof. The components of the microwave dielectric ceramic material areLi2CO3, Yb2O3 and SiO2, and the components of the microwave dielectric ceramic material are proportioned according to the stoichiometric ratio of LiYbSiO4. A traditional solid-phase reaction sinteringmethod is adopted, the preparation method is simple, and the sintering temperature is low. According to the prepared silicon-based temperature-stable microwave dielectric ceramic material, a near-zero resonant frequency temperature coefficient is obtained under the condition that a modifying material does not need to be added. The LiYbSiO4 ceramic prepared by the method disclosed by the inventionhas good microwave dielectric properties: the [epsilon]r ranges from 7.36 to 7.42, the quality factor Qf ranges from 19081 GHz to 25276 GHz, and the temperature coefficient of resonance frequency ranges from + 4.52 ppm/DEG C to + 8.03 ppm/DEG C.
本发明公开了一种硅基温度稳定型微波介质陶瓷材料及其制备方法。该微波介质陶瓷材料成分为LiCO、YbO、SiO，所述微波介质陶瓷材料成分按LiYbSiO化学计量比进行配比。本发明采用传统的固相反应烧结法，制备方法简单，烧结温度较低。制备得到的硅基温度稳定型微波介质陶瓷材料在不需要添加改性材料的情况下，获得近零的谐振频率温度系数。通过本发明方法制备的LiYbSiO陶瓷具有良好的微波介电性能：ε范围为7.36～7.42，品质因数Qf的范围为19081～25276GHz，谐振频率温度系数为+4.52ppm/℃～+8.03ppm/℃。
Silicon-based temperature-stable type microwave dielectric ceramic material and preparation method thereof
The invention discloses a silicon-based temperature-stable type microwave dielectric ceramic material and a preparation method thereof. The components of the microwave dielectric ceramic material areLi2CO3, Yb2O3 and SiO2, and the components of the microwave dielectric ceramic material are proportioned according to the stoichiometric ratio of LiYbSiO4. A traditional solid-phase reaction sinteringmethod is adopted, the preparation method is simple, and the sintering temperature is low. According to the prepared silicon-based temperature-stable microwave dielectric ceramic material, a near-zero resonant frequency temperature coefficient is obtained under the condition that a modifying material does not need to be added. The LiYbSiO4 ceramic prepared by the method disclosed by the inventionhas good microwave dielectric properties: the [epsilon]r ranges from 7.36 to 7.42, the quality factor Qf ranges from 19081 GHz to 25276 GHz, and the temperature coefficient of resonance frequency ranges from + 4.52 ppm/DEG C to + 8.03 ppm/DEG C.
本发明公开了一种硅基温度稳定型微波介质陶瓷材料及其制备方法。该微波介质陶瓷材料成分为LiCO、YbO、SiO，所述微波介质陶瓷材料成分按LiYbSiO化学计量比进行配比。本发明采用传统的固相反应烧结法，制备方法简单，烧结温度较低。制备得到的硅基温度稳定型微波介质陶瓷材料在不需要添加改性材料的情况下，获得近零的谐振频率温度系数。通过本发明方法制备的LiYbSiO陶瓷具有良好的微波介电性能：ε范围为7.36～7.42，品质因数Qf的范围为19081～25276GHz，谐振频率温度系数为+4.52ppm/℃～+8.03ppm/℃。
Silicon-based temperature-stable type microwave dielectric ceramic material and preparation method thereof
一种硅基温度稳定型微波介质陶瓷材料及其制备方法
SU CONGXUE (Autor:in) / AO LAIYUAN (Autor:in) / FANG LIANG (Autor:in)
31.07.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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