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Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of high-strength high-thermal-conductivity silicon nitride substrate
The invention discloses a preparation method of a high-strength high-thermal-conductivity silicon nitride substrate. The preparation method comprises the following steps: adding silicon nitride (Si3N4), silicon magnesium nitride (MgSiN2) and a sintering aid into a stirring mill, adding a solvent into the stirring mill, sufficiently stirring and grinding to obtain mixed slurry, drying the mixed slurry, and screening to obtain silicon nitride substrate formula powder; performing dry pressing forming and hot pressing sintering processes on the silicon nitride substrate formula powder, wherein thedry pressing forming process comprises the steps that the silicon nitride substrate formula powder is added into a forming mold, the pressure is increased to 5-20 MPa according to a dry pressing forming pressure curve, and pressure maintaining is conducted for 1-3 min, the hot pressing sintering process comprises a sintering temperature curve and a pressure curve, the temperature is increased to1700-1850 DEG C according to the sintering temperature curve, the pressure is increased to 20-45 MPa according to the pressure curve, and heat preservation and pressure maintaining sintering is conducted for 1-3 h to obtain a silicon nitride material blank; and carrying out flat grinding and grinding processing on the silicon nitride material green body to obtain the silicon nitride substrate. Thesilicon nitride substrate obtained by the preparation method has relatively high bending strength and thermal conductivity, and can be widely applied to the field of dynamic IGBTs.
本发明公开了高强高热导氮化硅基片的制备方法，将氮化硅(SiN)、氮化硅镁(MgSiN)和助烧剂加入搅拌磨，在搅拌磨中加入溶剂经充分搅拌研磨得到混合浆料，混合浆料经烘干、过筛得到氮化硅基片配方粉；将氮化硅基片配方粉经干压成型和热压烧结工艺，干压成型工艺是将氮化硅配方粉加入成型模具，按照干压成型压力曲线加压至5‑20MPa，并保压1‑3min；热压烧结工艺包括烧结温度曲线和压力曲线，温度按照烧结温度曲线升温至1700‑1850℃，压力按照压力曲线升压至20‑45MPa，并保温保压烧结1‑3小时得到氮化硅材料坯体；将氮化硅材料坯体经平磨、研磨加工得到氮化硅基片。该制备方法得到的氮化硅基片具有相对较高的抗弯强度和热导率，可广泛应用于动态IGBT领域。
Preparation method of high-strength high-thermal-conductivity silicon nitride substrate
The invention discloses a preparation method of a high-strength high-thermal-conductivity silicon nitride substrate. The preparation method comprises the following steps: adding silicon nitride (Si3N4), silicon magnesium nitride (MgSiN2) and a sintering aid into a stirring mill, adding a solvent into the stirring mill, sufficiently stirring and grinding to obtain mixed slurry, drying the mixed slurry, and screening to obtain silicon nitride substrate formula powder; performing dry pressing forming and hot pressing sintering processes on the silicon nitride substrate formula powder, wherein thedry pressing forming process comprises the steps that the silicon nitride substrate formula powder is added into a forming mold, the pressure is increased to 5-20 MPa according to a dry pressing forming pressure curve, and pressure maintaining is conducted for 1-3 min, the hot pressing sintering process comprises a sintering temperature curve and a pressure curve, the temperature is increased to1700-1850 DEG C according to the sintering temperature curve, the pressure is increased to 20-45 MPa according to the pressure curve, and heat preservation and pressure maintaining sintering is conducted for 1-3 h to obtain a silicon nitride material blank; and carrying out flat grinding and grinding processing on the silicon nitride material green body to obtain the silicon nitride substrate. Thesilicon nitride substrate obtained by the preparation method has relatively high bending strength and thermal conductivity, and can be widely applied to the field of dynamic IGBTs.
本发明公开了高强高热导氮化硅基片的制备方法，将氮化硅(SiN)、氮化硅镁(MgSiN)和助烧剂加入搅拌磨，在搅拌磨中加入溶剂经充分搅拌研磨得到混合浆料，混合浆料经烘干、过筛得到氮化硅基片配方粉；将氮化硅基片配方粉经干压成型和热压烧结工艺，干压成型工艺是将氮化硅配方粉加入成型模具，按照干压成型压力曲线加压至5‑20MPa，并保压1‑3min；热压烧结工艺包括烧结温度曲线和压力曲线，温度按照烧结温度曲线升温至1700‑1850℃，压力按照压力曲线升压至20‑45MPa，并保温保压烧结1‑3小时得到氮化硅材料坯体；将氮化硅材料坯体经平磨、研磨加工得到氮化硅基片。该制备方法得到的氮化硅基片具有相对较高的抗弯强度和热导率，可广泛应用于动态IGBT领域。
Preparation method of high-strength high-thermal-conductivity silicon nitride substrate
一种高强高热导氮化硅基片的制备方法
QU YOUFU (Autor:in) / WU MINGLIANG (Autor:in)
08.09.2020
Patent
Elektronische Ressource
Chinesisch
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