Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of high-thermal-conductivity and high-strength silicon nitride substrate
The invention provides a preparation method of a high-thermal-conductivity and high-strength silicon nitride substrate, and relates to the technical field of semiconductor ceramic substrate manufacturing. The preparation method of the high-thermal-conductivity and high-strength silicon nitride substrate comprises the following steps: mixing a hydroxyl copolymer modified dispersant, methylbenzene, absolute ethyl alcohol, magnesium oxide, yttrium oxide, beta-Si3N4 seed crystal and alpha-Si3N4 powder according to a certain proportion, adding the mixture into a ball milling tank, and carrying out ball milling for 24 hours; adding acrylic resin and a polyester plasticizer into the ball-milled mixture, and continuously ball-milling for 48 hours to obtain silicon nitride slurry; carrying out vacuum defoaming, filtering and tape casting on the obtained silicon nitride slurry to obtain a silicon nitride green body; cutting the obtained silicon nitride green body to obtain a cut silicon nitride green body; carrying out glue removal treatment on the cut silicon nitride green body to obtain a silicon nitride green body subjected to glue removal; and carrying out air pressure sintering on the silicon nitride green body after glue discharging to obtain the silicon nitride substrate. The thermal conductivity of the obtained silicon nitride substrate product is larger than or equal to 90 W/m.k, and the bending strength is larger than or equal to 750 MPa.
本发明提供一种高导热高强度氮化硅基板制备方法，涉及半导体陶瓷基板制造技术领域。该高导热高强度氮化硅基板制备方法是将羚基共聚物改性分散剂、甲苯、无水乙醇、氧化镁、氧化钇、β‑Si3N4晶种、α‑Si3N4粉体按一定比例混合加入球磨罐中球磨24h；在球磨后的混合物中加入丙烯酸树脂以及聚酯增塑剂继续球磨48h，得到氮化硅浆料；将得到氮化硅浆料经过真空脱泡、过滤、流延成型，得到氮化硅生坯；对得到氮化硅生坯进行切割处理，得到切割后的氮化硅生坯；对切割后的氮化硅生坯进行排胶处理，得到排胶后的氮化硅生坯；将排胶后的氮化硅生坯进行气压烧结，得到氮化硅基板。本发明得到的氮化硅基板产品热导率≥90W/m·k，抗弯强度≥750MPa。
Preparation method of high-thermal-conductivity and high-strength silicon nitride substrate
The invention provides a preparation method of a high-thermal-conductivity and high-strength silicon nitride substrate, and relates to the technical field of semiconductor ceramic substrate manufacturing. The preparation method of the high-thermal-conductivity and high-strength silicon nitride substrate comprises the following steps: mixing a hydroxyl copolymer modified dispersant, methylbenzene, absolute ethyl alcohol, magnesium oxide, yttrium oxide, beta-Si3N4 seed crystal and alpha-Si3N4 powder according to a certain proportion, adding the mixture into a ball milling tank, and carrying out ball milling for 24 hours; adding acrylic resin and a polyester plasticizer into the ball-milled mixture, and continuously ball-milling for 48 hours to obtain silicon nitride slurry; carrying out vacuum defoaming, filtering and tape casting on the obtained silicon nitride slurry to obtain a silicon nitride green body; cutting the obtained silicon nitride green body to obtain a cut silicon nitride green body; carrying out glue removal treatment on the cut silicon nitride green body to obtain a silicon nitride green body subjected to glue removal; and carrying out air pressure sintering on the silicon nitride green body after glue discharging to obtain the silicon nitride substrate. The thermal conductivity of the obtained silicon nitride substrate product is larger than or equal to 90 W/m.k, and the bending strength is larger than or equal to 750 MPa.
本发明提供一种高导热高强度氮化硅基板制备方法，涉及半导体陶瓷基板制造技术领域。该高导热高强度氮化硅基板制备方法是将羚基共聚物改性分散剂、甲苯、无水乙醇、氧化镁、氧化钇、β‑Si3N4晶种、α‑Si3N4粉体按一定比例混合加入球磨罐中球磨24h；在球磨后的混合物中加入丙烯酸树脂以及聚酯增塑剂继续球磨48h，得到氮化硅浆料；将得到氮化硅浆料经过真空脱泡、过滤、流延成型，得到氮化硅生坯；对得到氮化硅生坯进行切割处理，得到切割后的氮化硅生坯；对切割后的氮化硅生坯进行排胶处理，得到排胶后的氮化硅生坯；将排胶后的氮化硅生坯进行气压烧结，得到氮化硅基板。本发明得到的氮化硅基板产品热导率≥90W/m·k，抗弯强度≥750MPa。
Preparation method of high-thermal-conductivity and high-strength silicon nitride substrate
一种高导热高强度氮化硅基板制备方法
TAN YAOKAI (Autor:in) / XING MENGJIANG (Autor:in) / YANG YUANYUAN (Autor:in) / LI XIAOZHEN (Autor:in) / FAN QINGYANG (Autor:in) / ZHAO YUNSHENG (Autor:in) / LI HAO (Autor:in)
20.10.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
/
B28B
Formgeben von Ton oder anderen keramischen Stoffzusammensetzungen, Schlacke oder von Mischungen, die zementartiges Material enthalten, z.B. Putzmörtel
,
SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG OR MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
/
B28C
Tonaufbereitung
,
PREPARING CLAY
Preparation method of high-strength high-thermal-conductivity silicon nitride substrate
| Europäisches Patentamt | 2020
| Europäisches Patentamt | 2024
Preparation method of high-thermal-conductivity silicon nitride substrate
| Europäisches Patentamt | 2020
High-thermal-conductivity silicon nitride substrate and preparation method thereof
| Europäisches Patentamt | 2024
High-thermal-conductivity silicon nitride substrate and preparation method thereof
| Europäisches Patentamt | 2023