Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-strength and high-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof
The invention relates to the field of silicon nitride ceramic substrates, and particularly discloses a high-strength and high-thermal-conductivity silicon nitride ceramic substrate and a preparation method thereof. The high-strength and high-heat-conductivity silicon nitride ceramic substrate is prepared from the following raw materials in parts by weight: 100 to 150 parts of silicon nitride, 80 to 120 parts of solvent, 6 to 12 parts of binder, 5 to 10 parts of reinforcing filler, 5 to 12 parts of heat-conducting filler, 2 to 5 parts of dispersing agent, 1 to 2 parts of defoaming agent and 3 to 7 parts of sintering aid, the heat-conducting filler is composed of silicon carbide and graphene in a mass ratio of 1: (0.5-1); the preparation method comprises the following steps: uniformly mixing the silicon nitride, the solvent, the reinforcing filler and the heat-conducting filler, then adding the binder, the dispersing agent, the defoaming agent and the sintering aid, uniformly mixing, defoaming, and carrying out tape casting, drying, isostatic pressing, cutting, glue discharging, high-temperature sintering and cooling to obtain a finished product. The material has the advantages of high strength and high thermal conductivity.
本申请涉及氮化硅陶瓷基板领域，具体公开了一种高强度高导热氮化硅陶瓷基板及其制备方法；一种高强度高导热氮化硅陶瓷基板，包含如下重量份的原料：氮化硅100‑150份、溶剂80‑120份、粘结剂6‑12份、增强填料5‑10份、导热填料5‑12份、分散剂2‑5份、消泡剂1‑2份、烧结助剂3‑7份；导热填料由质量比为1:0.5‑1的碳化硅、石墨烯组成；其制备方法为：氮化硅、溶剂、增强填料、导热填料混匀，然后加粘结剂、分散剂、消泡剂、烧结助剂混匀，脱泡，经流延成型、干燥、等静压压制，裁切、排胶、高温烧结、冷却，制得成品；具有高强度、高导热的优点。
High-strength and high-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof
The invention relates to the field of silicon nitride ceramic substrates, and particularly discloses a high-strength and high-thermal-conductivity silicon nitride ceramic substrate and a preparation method thereof. The high-strength and high-heat-conductivity silicon nitride ceramic substrate is prepared from the following raw materials in parts by weight: 100 to 150 parts of silicon nitride, 80 to 120 parts of solvent, 6 to 12 parts of binder, 5 to 10 parts of reinforcing filler, 5 to 12 parts of heat-conducting filler, 2 to 5 parts of dispersing agent, 1 to 2 parts of defoaming agent and 3 to 7 parts of sintering aid, the heat-conducting filler is composed of silicon carbide and graphene in a mass ratio of 1: (0.5-1); the preparation method comprises the following steps: uniformly mixing the silicon nitride, the solvent, the reinforcing filler and the heat-conducting filler, then adding the binder, the dispersing agent, the defoaming agent and the sintering aid, uniformly mixing, defoaming, and carrying out tape casting, drying, isostatic pressing, cutting, glue discharging, high-temperature sintering and cooling to obtain a finished product. The material has the advantages of high strength and high thermal conductivity.
本申请涉及氮化硅陶瓷基板领域，具体公开了一种高强度高导热氮化硅陶瓷基板及其制备方法；一种高强度高导热氮化硅陶瓷基板，包含如下重量份的原料：氮化硅100‑150份、溶剂80‑120份、粘结剂6‑12份、增强填料5‑10份、导热填料5‑12份、分散剂2‑5份、消泡剂1‑2份、烧结助剂3‑7份；导热填料由质量比为1:0.5‑1的碳化硅、石墨烯组成；其制备方法为：氮化硅、溶剂、增强填料、导热填料混匀，然后加粘结剂、分散剂、消泡剂、烧结助剂混匀，脱泡，经流延成型、干燥、等静压压制，裁切、排胶、高温烧结、冷却，制得成品；具有高强度、高导热的优点。
High-strength and high-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof
一种高强度高导热氮化硅陶瓷基板及其制备方法
LIU WEIPING (Autor:in) / CHEN ZHI (Autor:in) / TAN CHENGYE (Autor:in)
07.06.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof
| Europäisches Patentamt | 2021
Preparation method of high-strength high-thermal-conductivity silicon nitride substrate
| Europäisches Patentamt | 2020
| Europäisches Patentamt | 2021
| Europäisches Patentamt | 2023
High-thermal-conductivity silicon nitride ceramic and preparation method thereof
| Europäisches Patentamt | 2020