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MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH
This member for use in a plasma treatment device is provided with a substrate, and, on the substrate, a film primarily composed of yttrium oxide. In the film, closed pores occupy no more than 0.2% ofthe surface area, and the half width of the diffraction peak in the (222) surface of the yttrium oxide obtained by x-ray diffraction is less than or equal to 0.25 degree. This plasma treatment deviceis provided with the member for use in a plasma treatment device.
本发明的等离子体处理装置用构件,具备基材和在该基材上以氧化钇为主成分的膜。而且,该膜中,闭口气孔的面积占有率为0.2%以下,由X射线衍射得到的氧化钇的(222)面的衍射峰的半峰宽为0.25°以下。本发明的等离子体处理装置具备上述等离子体处理装置用构件。
MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH
This member for use in a plasma treatment device is provided with a substrate, and, on the substrate, a film primarily composed of yttrium oxide. In the film, closed pores occupy no more than 0.2% ofthe surface area, and the half width of the diffraction peak in the (222) surface of the yttrium oxide obtained by x-ray diffraction is less than or equal to 0.25 degree. This plasma treatment deviceis provided with the member for use in a plasma treatment device.
本发明的等离子体处理装置用构件,具备基材和在该基材上以氧化钇为主成分的膜。而且,该膜中,闭口气孔的面积占有率为0.2%以下,由X射线衍射得到的氧化钇的(222)面的衍射峰的半峰宽为0.25°以下。本发明的等离子体处理装置具备上述等离子体处理装置用构件。
MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH
等离子体处理装置用构件和具备它的等离子体处理装置
ISHIKAWA KAZUHIRO (Autor:in) / HINO TAKASHI (Autor:in) / SAITO SHUICHI (Autor:in)
22.09.2020
Patent
Elektronische Ressource
Chinesisch
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