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MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH
A member for use in a plasma processing device of the disclosure includes a base material and a film containing yttrium oxide as a main component on the base material. An area occupancy of closed pores of the film is 0.2 area% or less, and a full width at half maximum of a diffraction peak on a (222) plane of yttrium oxide obtained by X-ray diffraction of the film is 0.25° or less. A plasma processing device according to the disclosure includes the member for use in a plasma processing device.
MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH
A member for use in a plasma processing device of the disclosure includes a base material and a film containing yttrium oxide as a main component on the base material. An area occupancy of closed pores of the film is 0.2 area% or less, and a full width at half maximum of a diffraction peak on a (222) plane of yttrium oxide obtained by X-ray diffraction of the film is 0.25° or less. A plasma processing device according to the disclosure includes the member for use in a plasma processing device.
MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH
ELEMENT ZUR VERWENDUNG IN EINER PLASMABEHANDLUNGSVORRICHTUNG UND PLASMABEHANDLUNGSVORRICHTUNG DAMIT
ÉLÉMENT DESTINÉ À ÊTRE UTILISÉ DANS UN DISPOSITIF DE TRAITEMENT PAR PLASMA ET DISPOSITIF DE TRAITEMENT PAR PLASMA ÉQUIPÉ DE CELUI-CI
ISHIKAWA KAZUHIRO (Autor:in) / HINO TAKASHI (Autor:in) / SAITO SHUICHI (Autor:in)
10.11.2021
Patent
Elektronische Ressource
Englisch
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