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    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    Neue Suche nach: ISHIKAWA KAZUHIRO
    Neue Suche nach: HINO TAKASHI
    Neue Suche nach: SAITO SHUICHI

    This member for use in a plasma treatment device is provided with a substrate, and, on at least part of the substrate, a film of an oxide of a rare earth element. The film thickness has a coefficientof variation of less than or equal to 0.04. This plasma treatment device is provided with the aforementioned member for use in a plasma treatment device. The member for use in a plasma treatment device has low film thickness variability.

    本发明的等离子体处理装置用构件，具备基材和在该基材的至少一部分上的稀土类元素的氧化物的膜。该膜中，厚度的变异系数为0.04以下。本发明的等离子体处理装置，具备上述等离子体处理装置用构件。本发明的等离子体处理装置用构件，膜的厚度的偏差少。

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    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    Neue Suche nach: ISHIKAWA KAZUHIRO
    Neue Suche nach: HINO TAKASHI
    Neue Suche nach: SAITO SHUICHI

    This member for use in a plasma treatment device is provided with a substrate, and, on at least part of the substrate, a film of an oxide of a rare earth element. The film thickness has a coefficientof variation of less than or equal to 0.04. This plasma treatment device is provided with the aforementioned member for use in a plasma treatment device. The member for use in a plasma treatment device has low film thickness variability.

    本发明的等离子体处理装置用构件，具备基材和在该基材的至少一部分上的稀土类元素的氧化物的膜。该膜中，厚度的变异系数为0.04以下。本发明的等离子体处理装置，具备上述等离子体处理装置用构件。本发明的等离子体处理装置用构件，膜的厚度的偏差少。

    Zugriff

    Download

    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    Neue Suche nach: ISHIKAWA KAZUHIRO
    Neue Suche nach: HINO TAKASHI
    Neue Suche nach: SAITO SHUICHI

    This member for use in a plasma treatment device is provided with a substrate, and, on at least part of the substrate, a film of an oxide of a rare earth element. The film thickness has a coefficientof variation of less than or equal to 0.04. This plasma treatment device is provided with the aforementioned member for use in a plasma treatment device. The member for use in a plasma treatment device has low film thickness variability.

    本发明的等离子体处理装置用构件，具备基材和在该基材的至少一部分上的稀土类元素的氧化物的膜。该膜中，厚度的变异系数为0.04以下。本发明的等离子体处理装置，具备上述等离子体处理装置用构件。本发明的等离子体处理装置用构件，膜的厚度的偏差少。

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    Titel:

    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    Weitere Titelangaben:

    等离子体处理装置用构件和具备它的等离子体处理装置

    Beteiligte:

    ISHIKAWA KAZUHIRO (Autor:in) / HINO TAKASHI (Autor:in) / SAITO SHUICHI (Autor:in)

    Erscheinungsdatum:

    25.09.2020

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Chinesisch

    Klassifikation:

    IPC:  C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / H05H Plasmatechnik , PLASMA TECHNIQUE

    Ähnliche Titel

    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    ISHIKAWA KAZUHIRO / HINO TAKASHI / SAITO SHUICHI | Europäisches Patentamt | 2019

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    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

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    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    ISHIKAWA KAZUHIRO / HINO TAKASHI / SAITO SHUICHI | Europäisches Patentamt | 2024

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    MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH

    ISHIKAWA KAZUHIRO / HINO TAKASHI / SAITO SHUICHI | Europäisches Patentamt | 2020

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