Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Silicon-based decorative material and preparation method thereof
The invention discloses a silicon-based decorative material and a preparation method thereof, the silicon-based decorative material is sandy, in an X-ray diffraction pattern of the silicon-based decorative material, under the condition that the silicon-based decorative material is expressed by interplanar spacing, peaks exist near the interplanar spacing d of 3.34, 4.04 and 4.25, and the content of sodium oxide of the silicon-based decorative material is greater than 1%; the silicon-based decorative material disclosed by the invention has the advantages of low cost, high whiteness and good adhesive property.
本发明公开了一种硅基装饰材料及其制备方法，所述硅基装饰材料为砂状，在所述硅基装饰材料的X射线衍射图中，在以晶面间距表示的情况下，在晶面间距d为3.34附近、4.04附近和4.25附近具有峰，所述硅基装饰材料的氧化钠的含量大于1％；本发明的硅基装饰材料具有成本低、白度高和粘结性能好的优点。
Silicon-based decorative material and preparation method thereof
The invention discloses a silicon-based decorative material and a preparation method thereof, the silicon-based decorative material is sandy, in an X-ray diffraction pattern of the silicon-based decorative material, under the condition that the silicon-based decorative material is expressed by interplanar spacing, peaks exist near the interplanar spacing d of 3.34, 4.04 and 4.25, and the content of sodium oxide of the silicon-based decorative material is greater than 1%; the silicon-based decorative material disclosed by the invention has the advantages of low cost, high whiteness and good adhesive property.
本发明公开了一种硅基装饰材料及其制备方法，所述硅基装饰材料为砂状，在所述硅基装饰材料的X射线衍射图中，在以晶面间距表示的情况下，在晶面间距d为3.34附近、4.04附近和4.25附近具有峰，所述硅基装饰材料的氧化钠的含量大于1％；本发明的硅基装饰材料具有成本低、白度高和粘结性能好的优点。
Silicon-based decorative material and preparation method thereof
一种硅基装饰材料及其制备方法
QIU YEHENG (Autor:in)
02.03.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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