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Cold isostatic pressing forming preparation method of nickel oxide-based ceramic target material
The invention relates to a cold isostatic pressing forming preparation method of a nickel oxide-based ceramic target material, wherein the method comprises the following steps: A, preparing raw materials: preparing mixed powder of nickel oxide powder and doped source powder, wherein the total mass fraction of doped source elements in the mixed powder is not more than 10%, wherein the doping sourceelement is selected from one or more of 0-6% of Li, 0-0.3% of Na, 0-1.0% of Mg, 0-0.1% of Al, 0-0.1% of Si, 0-0.15% of K, 0-12% of Zn, 0-1.5% of Zr, 0-1.2% of Mn, 0-10% of Cu, 0-1.2% of Cr, 0-0.3% ofV, 0-10% of W and 0-2.5% of Ti; B, carrying out spray drying; C, compacting by vibration; D, feeding a mold into a cold isostatic pressing chamber for pressing; E, degumming a biscuit; F, sintering;G, cooling after heat preservation is finished; and H, machining or not machining according to needs. The preparation method can be used for preparing the nickel oxide-based ceramic which is good in conductivity, relatively high in purity and fine in grain size.
本发明涉及一种氧化镍基陶瓷靶材材料的冷等静压成型制备方法，包括以下步骤A原料准备：氧化镍粉体和掺杂源粉体的混合粉体，所述混合粉体中掺杂源元素的总质量分数不高于10％，所述掺杂源元素选自Li 0‑6％、Na 0‑0.3％、Mg 0‑1.0％、Al 0‑0.1％、Si 0‑0.1％、K 0‑0.15％、Zn 0‑12％、Zr 0‑1.5％、Mn 0‑1.2％、Cu 0‑10％、Cr0‑1.2％、V 0‑0.3％、W 0‑10％、Ti 0‑2.5％中的一种或几种；B喷雾干燥；C振实；D将模具送入冷等静压腔室内进行压制；E素坯脱胶；F烧结；G保温结束，冷却；H根据需要进行或不进行机加工。该种制备方法能制备出导电性良好、纯度较高、晶粒尺寸细小的氧化镍基陶瓷。
Cold isostatic pressing forming preparation method of nickel oxide-based ceramic target material
The invention relates to a cold isostatic pressing forming preparation method of a nickel oxide-based ceramic target material, wherein the method comprises the following steps: A, preparing raw materials: preparing mixed powder of nickel oxide powder and doped source powder, wherein the total mass fraction of doped source elements in the mixed powder is not more than 10%, wherein the doping sourceelement is selected from one or more of 0-6% of Li, 0-0.3% of Na, 0-1.0% of Mg, 0-0.1% of Al, 0-0.1% of Si, 0-0.15% of K, 0-12% of Zn, 0-1.5% of Zr, 0-1.2% of Mn, 0-10% of Cu, 0-1.2% of Cr, 0-0.3% ofV, 0-10% of W and 0-2.5% of Ti; B, carrying out spray drying; C, compacting by vibration; D, feeding a mold into a cold isostatic pressing chamber for pressing; E, degumming a biscuit; F, sintering;G, cooling after heat preservation is finished; and H, machining or not machining according to needs. The preparation method can be used for preparing the nickel oxide-based ceramic which is good in conductivity, relatively high in purity and fine in grain size.
本发明涉及一种氧化镍基陶瓷靶材材料的冷等静压成型制备方法，包括以下步骤A原料准备：氧化镍粉体和掺杂源粉体的混合粉体，所述混合粉体中掺杂源元素的总质量分数不高于10％，所述掺杂源元素选自Li 0‑6％、Na 0‑0.3％、Mg 0‑1.0％、Al 0‑0.1％、Si 0‑0.1％、K 0‑0.15％、Zn 0‑12％、Zr 0‑1.5％、Mn 0‑1.2％、Cu 0‑10％、Cr0‑1.2％、V 0‑0.3％、W 0‑10％、Ti 0‑2.5％中的一种或几种；B喷雾干燥；C振实；D将模具送入冷等静压腔室内进行压制；E素坯脱胶；F烧结；G保温结束，冷却；H根据需要进行或不进行机加工。该种制备方法能制备出导电性良好、纯度较高、晶粒尺寸细小的氧化镍基陶瓷。
Cold isostatic pressing forming preparation method of nickel oxide-based ceramic target material
一种氧化镍基陶瓷靶材材料的冷等静压成型制备方法
GAO MING (Autor:in) / ZHANG HU (Autor:in) / ZHANG HUARUI (Autor:in) / YANG BENRUN (Autor:in)
09.03.2021
Patent
Elektronische Ressource
Chinesisch
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