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Cold isostatic pressing forming preparation method of tungsten oxide-based ceramic target material
The invention relates to a cold isostatic pressing forming preparation method of a tungsten oxide-based ceramic target material, which comprises the following steps of raw material preparation: takingprimary mixed powder containing high-purity tungsten oxide and doping source powder, enabling the doping source to be selected from at least three of Ti, Mo, V, Al, Li and Zr, enabling the purity ofthe mixed powder to be greater than 99.95%, enabling the average particle size to be 500nm to 1800nm, and enabling the D50 particle size to be 200-750nm, wherein the quantitative relation of M1, M2, M3, M4 and M5 conforms to the formula as described in the specification, conducting spray drying, powder filling and compaction, pressing, biscuit degumming and sintering, taking out the sintered blankafter heat preservation, and conducting or not conducting machining according to needs. The cold isostatic pressing forming preparation method can be used for preparing the tungsten oxide-based ceramic target material with good conductivity, higher purity, fine grain size and high density.
本发明涉及一种氧化钨基陶瓷靶材材料的冷等静压成型制备方法，包括以下步骤：原料准备：包含高纯氧化钨和掺杂源粉体的一次混合粉体，掺杂源选自Ti、Mo、V、Al、Li、Zr中的至少三种，所述混合粉体的纯度大于99.95％，平均粒径500nm‑1800nm，D50粒径在200‑750nm；M1、M2、M3、M4、M5的数量关系符合公式：喷雾干燥、装粉振实、压制、素坯脱胶、烧结；保温结束取出烧坯；根据需要进行或不进行机加工。本发明的冷等静压成型制备方法能制备得到导电性良好、纯度较高、晶粒尺寸细小、致密度高的氧化钨基陶瓷靶材材料。
Cold isostatic pressing forming preparation method of tungsten oxide-based ceramic target material
The invention relates to a cold isostatic pressing forming preparation method of a tungsten oxide-based ceramic target material, which comprises the following steps of raw material preparation: takingprimary mixed powder containing high-purity tungsten oxide and doping source powder, enabling the doping source to be selected from at least three of Ti, Mo, V, Al, Li and Zr, enabling the purity ofthe mixed powder to be greater than 99.95%, enabling the average particle size to be 500nm to 1800nm, and enabling the D50 particle size to be 200-750nm, wherein the quantitative relation of M1, M2, M3, M4 and M5 conforms to the formula as described in the specification, conducting spray drying, powder filling and compaction, pressing, biscuit degumming and sintering, taking out the sintered blankafter heat preservation, and conducting or not conducting machining according to needs. The cold isostatic pressing forming preparation method can be used for preparing the tungsten oxide-based ceramic target material with good conductivity, higher purity, fine grain size and high density.
本发明涉及一种氧化钨基陶瓷靶材材料的冷等静压成型制备方法，包括以下步骤：原料准备：包含高纯氧化钨和掺杂源粉体的一次混合粉体，掺杂源选自Ti、Mo、V、Al、Li、Zr中的至少三种，所述混合粉体的纯度大于99.95％，平均粒径500nm‑1800nm，D50粒径在200‑750nm；M1、M2、M3、M4、M5的数量关系符合公式：喷雾干燥、装粉振实、压制、素坯脱胶、烧结；保温结束取出烧坯；根据需要进行或不进行机加工。本发明的冷等静压成型制备方法能制备得到导电性良好、纯度较高、晶粒尺寸细小、致密度高的氧化钨基陶瓷靶材材料。
Cold isostatic pressing forming preparation method of tungsten oxide-based ceramic target material
一种氧化钨基陶瓷靶材材料的冷等静压成型制备方法
GAO MING (Autor:in) / ZHANG HU (Autor:in) / ZHANG HUARUI (Autor:in) / YANG BENRUN (Autor:in)
12.03.2021
Patent
Elektronische Ressource
Chinesisch
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