Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of tellurium-bismuth-based target material
The invention discloses a preparation method of a tellurium-bismuth-based target material, wherein the comprises the following steps: taking a P-type Te3BixSb[2-x]+y wt.%Te crystal bar, polishing theoxide layer on the surface of the crystal bar, washing with absolute ethyl alcohol cleanly, and finally blow-drying; weighing a certain mass of blow-dried crystal bars, crushing the crystal bars by acrusher, and putting the crushed crystal bars into a smelting crucible; vacuumizing the crucible to (3.5+/-1)*10<-2> Pa, introducing protective gas to wash a furnace, vacuumizing again, introducing new protective gas, electrifying and heating to 650-750 DEG C to smelt for the first time, and regulating the heating power to increase the temperature to 750-800 DEG C to refine for the second time toobtain tellurium-bismuth-based melt; casting the tellurium-bismuth-based melt to obtain a tellurium-bismuth-based target blank; and machining the tellurium-bismuth-based target blank to obtain the tellurium-bismuth-based target material. According to the preparation method of the tellurium-bismuth-based target material, the prepared tellurium-bismuth-based target material is high in purity, the relative density is larger than 95%, a thin-film thermoelectric material prepared from the target material can be bent, the performance is excellent, and various application requirements can be met.
本发明揭示了一种碲铋基靶材的制备方法，包括以下步骤：取P型Te3BixSb2‑x+ywt.%Te的晶棒，将其表面的氧化层打磨干净，并用无水乙醇清洗干净，最后吹干；称取一定质量吹干后的晶棒，经破碎机破碎后置于熔炼坩埚内；坩埚抽真空至（3.5±1）×10‑2Pa后，充入保护气体洗炉,再次抽真空后，回充新的保护气体，送电加热至温度为650～750℃进行第一时间的熔炼，调节加热功率使温度上升为750～800℃进行第二时间的精炼，得到碲铋基熔体；将碲铋基熔体进行浇铸得到碲铋基靶坯；将碲铋基靶坯进行机加工后，得到碲铋基靶材。本发明提出一种碲铋基靶材的制备方法，制备得到的碲铋基靶材纯度高，相对密度大于95%，使用该靶材制备的薄膜热电材料能进行弯曲，性能优异，能满足各种应用需求。
Preparation method of tellurium-bismuth-based target material
The invention discloses a preparation method of a tellurium-bismuth-based target material, wherein the comprises the following steps: taking a P-type Te3BixSb[2-x]+y wt.%Te crystal bar, polishing theoxide layer on the surface of the crystal bar, washing with absolute ethyl alcohol cleanly, and finally blow-drying; weighing a certain mass of blow-dried crystal bars, crushing the crystal bars by acrusher, and putting the crushed crystal bars into a smelting crucible; vacuumizing the crucible to (3.5+/-1)*10<-2> Pa, introducing protective gas to wash a furnace, vacuumizing again, introducing new protective gas, electrifying and heating to 650-750 DEG C to smelt for the first time, and regulating the heating power to increase the temperature to 750-800 DEG C to refine for the second time toobtain tellurium-bismuth-based melt; casting the tellurium-bismuth-based melt to obtain a tellurium-bismuth-based target blank; and machining the tellurium-bismuth-based target blank to obtain the tellurium-bismuth-based target material. According to the preparation method of the tellurium-bismuth-based target material, the prepared tellurium-bismuth-based target material is high in purity, the relative density is larger than 95%, a thin-film thermoelectric material prepared from the target material can be bent, the performance is excellent, and various application requirements can be met.
本发明揭示了一种碲铋基靶材的制备方法，包括以下步骤：取P型Te3BixSb2‑x+ywt.%Te的晶棒，将其表面的氧化层打磨干净，并用无水乙醇清洗干净，最后吹干；称取一定质量吹干后的晶棒，经破碎机破碎后置于熔炼坩埚内；坩埚抽真空至（3.5±1）×10‑2Pa后，充入保护气体洗炉,再次抽真空后，回充新的保护气体，送电加热至温度为650～750℃进行第一时间的熔炼，调节加热功率使温度上升为750～800℃进行第二时间的精炼，得到碲铋基熔体；将碲铋基熔体进行浇铸得到碲铋基靶坯；将碲铋基靶坯进行机加工后，得到碲铋基靶材。本发明提出一种碲铋基靶材的制备方法，制备得到的碲铋基靶材纯度高，相对密度大于95%，使用该靶材制备的薄膜热电材料能进行弯曲，性能优异，能满足各种应用需求。
Preparation method of tellurium-bismuth-based target material
一种碲铋基靶材的制备方法
CAI XINZHI (Autor:in) / ZHU LIU (Autor:in) / TONG PEIYUN (Autor:in) / RAN CHENGYI (Autor:in) / SU ZISHAN (Autor:in)
09.03.2021
Patent
Elektronische Ressource
Chinesisch
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