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Tellurium-selenium-zinc planar target material and preparation method thereof
The invention discloses a tellurium-selenium-zinc planar target material and a preparation method thereof, and belongs to the technical field of target material processing. According to the method, zinc selenide powder is doped with zinc telluride powder to prepare the tellurium-zinc-selenium target material, so that the target material can realize regulation and control of a normal-temperature band gap to a range of 2.15-2.82 eV, and compared with zinc telluride, the light transmittance of the material is improved; on the other hand, in order to guarantee the uniformity, compactness and mechanical strength of the target material, the preparation method adopts a double-section heating and pressurizing method to heat and prepare the powder, so that the relative density of the prepared tellurium-zinc-selenium planar target material reaches 96% or above, and the prepared tellurium-zinc-selenium planar target material is high in bending strength and good in uniformity.
本发明公开了一种碲硒锌平面靶材及其制备方法,属于靶材加工技术领域。该方法以硒化锌粉体对碲化锌粉体进行掺杂制备碲锌硒靶材,使得靶材可以实现常温带隙调控至2.15~2.82eV范围,并且相比于碲化锌提升材料对光的透射率;另一方面,为了保障靶材的均匀性、密实性和力学强度,本发明所述制备方法采用双段升温加压的方法对粉体加热制备,使得制备的碲锌硒平面靶材相对密度达到96%以上,并且抗弯强度高,均匀性好。
Tellurium-selenium-zinc planar target material and preparation method thereof
The invention discloses a tellurium-selenium-zinc planar target material and a preparation method thereof, and belongs to the technical field of target material processing. According to the method, zinc selenide powder is doped with zinc telluride powder to prepare the tellurium-zinc-selenium target material, so that the target material can realize regulation and control of a normal-temperature band gap to a range of 2.15-2.82 eV, and compared with zinc telluride, the light transmittance of the material is improved; on the other hand, in order to guarantee the uniformity, compactness and mechanical strength of the target material, the preparation method adopts a double-section heating and pressurizing method to heat and prepare the powder, so that the relative density of the prepared tellurium-zinc-selenium planar target material reaches 96% or above, and the prepared tellurium-zinc-selenium planar target material is high in bending strength and good in uniformity.
本发明公开了一种碲硒锌平面靶材及其制备方法,属于靶材加工技术领域。该方法以硒化锌粉体对碲化锌粉体进行掺杂制备碲锌硒靶材,使得靶材可以实现常温带隙调控至2.15~2.82eV范围,并且相比于碲化锌提升材料对光的透射率;另一方面,为了保障靶材的均匀性、密实性和力学强度,本发明所述制备方法采用双段升温加压的方法对粉体加热制备,使得制备的碲锌硒平面靶材相对密度达到96%以上,并且抗弯强度高,均匀性好。
Tellurium-selenium-zinc planar target material and preparation method thereof
一种碲硒锌平面靶材及其制备方法
LI YUNHONG (Autor:in) / WEN CHONGBIN (Autor:in)
15.03.2024
Patent
Elektronische Ressource
Chinesisch
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