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Normal-pressure sintered anti-radiation silicon carbide ceramic material and preparation method thereof
The invention discloses a normal-pressure sintered anti-radiation silicon carbide ceramic material and a preparation method thereof. The anti-radiation silicon carbide ceramic material comprises a silicon carbide matrix and 11B4C entering silicon carbide crystal lattices through in-situ solid solution, wherein the mass ratio of 11B4C to the anti-radiation silicon carbide ceramic material is less than 1wt%. The in-situ generated B4C is easily dissolved into silicon carbide crystal lattices, the grain boundary energy can be reduced to be low enough by using a very small amount of B element, the sintering densification of the silicon carbide ceramic is promoted, and the defects that the self-diffusivity of SiC is poor and the sinterability of the silicon carbide ceramic is poor due to the existence of strong covalent bonds are overcome.
本发明公开一种常压烧结抗辐照碳化硅陶瓷材料及其制备方法。所述抗辐照碳化硅陶瓷材料包括碳化硅基体和原位固溶进入碳化硅晶格的11B4C；其中，11B4C占抗辐照碳化硅陶瓷材料的质量比为1wt%以下。原位生成的B4C容易固溶进碳化硅晶格，能以极少量的B元素使晶界能降至足够低，促进碳化硅陶瓷烧结致密化，克服了SiC的自扩散性差以及强共价键的存在使其烧结性差的缺陷。
Normal-pressure sintered anti-radiation silicon carbide ceramic material and preparation method thereof
The invention discloses a normal-pressure sintered anti-radiation silicon carbide ceramic material and a preparation method thereof. The anti-radiation silicon carbide ceramic material comprises a silicon carbide matrix and 11B4C entering silicon carbide crystal lattices through in-situ solid solution, wherein the mass ratio of 11B4C to the anti-radiation silicon carbide ceramic material is less than 1wt%. The in-situ generated B4C is easily dissolved into silicon carbide crystal lattices, the grain boundary energy can be reduced to be low enough by using a very small amount of B element, the sintering densification of the silicon carbide ceramic is promoted, and the defects that the self-diffusivity of SiC is poor and the sinterability of the silicon carbide ceramic is poor due to the existence of strong covalent bonds are overcome.
本发明公开一种常压烧结抗辐照碳化硅陶瓷材料及其制备方法。所述抗辐照碳化硅陶瓷材料包括碳化硅基体和原位固溶进入碳化硅晶格的11B4C；其中，11B4C占抗辐照碳化硅陶瓷材料的质量比为1wt%以下。原位生成的B4C容易固溶进碳化硅晶格，能以极少量的B元素使晶界能降至足够低，促进碳化硅陶瓷烧结致密化，克服了SiC的自扩散性差以及强共价键的存在使其烧结性差的缺陷。
Normal-pressure sintered anti-radiation silicon carbide ceramic material and preparation method thereof
一种常压烧结抗辐照碳化硅陶瓷材料及其制备方法
CHEN JIAN (Autor:in) / ZHU MING (Autor:in) / HUANG ZHENGREN (Autor:in) / CHEN WENHUI (Autor:in) / YAO XIUMIN (Autor:in) / CHEN ZHONGMING (Autor:in) / LIU XUEJIAN (Autor:in)
14.05.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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