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Silicon nitride substrate sintering method
The invention discloses a silicon nitride substrate sintering method. The invention provides a silicon nitride substrate sintering method, which comprises the following steps: uniformly mixing 500-600g of silicon nitride powder, 20-25g of zirconium oxide powder, 10-15g of aluminum oxide powder and 10-15g of gadolinium oxide powder, then adding 10-12g of polyvinyl butyral, 9-12g of dibutyl phthalate, 15-20g of polyethylene glycol and 10-15g of stearic acid, carrying out a ball milling process and defoaming treatment, degreasing and presintering a green body in nitrogen, further sintering the pre-sintered green body, and conducting cooling to obtain a silicon nitride substrate. The defects that a large-size substrate is prone to deformation, not compact and the like in the sintering process are overcome, and therefore the large-size ultra-thin silicon nitride substrate with the flatness reaching +-0.002 mm and the density reaching 99% can be obtained.
本发明公开一种氮化硅基板烧结方法。本发明提供的一种氮化硅基板烧结方法，通过将500g～600g氮化硅粉末、20g～25g氧化锆粉末、10g～15g氧化铝粉末以及10g～15g氧化钆粉末混合均匀后加入10g～12g聚乙烯醇缩丁醛、9g～12g邻苯二甲酸二丁酯、15g～20g聚乙二醇以及10g～15g硬脂酸，进行球磨工艺、脱泡处理，将生坯在氮气中进行脱脂和预烧结，将预烧结后的生坯进行进一步烧结，冷却后得到氮化硅基板，解决了大尺寸基板在烧结过程中易变形，不致密等缺陷，从而可得到平整度达到+‑0.002mm，致密度达到99％的大尺寸超薄氮化硅基板。
Silicon nitride substrate sintering method
The invention discloses a silicon nitride substrate sintering method. The invention provides a silicon nitride substrate sintering method, which comprises the following steps: uniformly mixing 500-600g of silicon nitride powder, 20-25g of zirconium oxide powder, 10-15g of aluminum oxide powder and 10-15g of gadolinium oxide powder, then adding 10-12g of polyvinyl butyral, 9-12g of dibutyl phthalate, 15-20g of polyethylene glycol and 10-15g of stearic acid, carrying out a ball milling process and defoaming treatment, degreasing and presintering a green body in nitrogen, further sintering the pre-sintered green body, and conducting cooling to obtain a silicon nitride substrate. The defects that a large-size substrate is prone to deformation, not compact and the like in the sintering process are overcome, and therefore the large-size ultra-thin silicon nitride substrate with the flatness reaching +-0.002 mm and the density reaching 99% can be obtained.
本发明公开一种氮化硅基板烧结方法。本发明提供的一种氮化硅基板烧结方法，通过将500g～600g氮化硅粉末、20g～25g氧化锆粉末、10g～15g氧化铝粉末以及10g～15g氧化钆粉末混合均匀后加入10g～12g聚乙烯醇缩丁醛、9g～12g邻苯二甲酸二丁酯、15g～20g聚乙二醇以及10g～15g硬脂酸，进行球磨工艺、脱泡处理，将生坯在氮气中进行脱脂和预烧结，将预烧结后的生坯进行进一步烧结，冷却后得到氮化硅基板，解决了大尺寸基板在烧结过程中易变形，不致密等缺陷，从而可得到平整度达到+‑0.002mm，致密度达到99％的大尺寸超薄氮化硅基板。
Silicon nitride substrate sintering method
一种氮化硅基板烧结方法
BAI XIAOLONG (Autor:in)
28.05.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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