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BATCH SINTERING METHOD FOR HIGH-PROPERTY SILICON NITRIDE CERAMIC SUBSTRATE

ZHANG HUI / LIU XUEJIAN / JIANG JINDI / YAO XIUMIN / HUANG ZHENGREN / CHEN ZHONGMING / HUANG JIAN

The present disclosure relates to a batch sintering method for a high-property silicon nitride ceramic substrate. The batch sintering method includes: (1) silicon nitride ceramic substrate green bodies are stacked and put into a boron nitride crucible, and a layer of boron nitride powder is applied between adjacent silicon nitride ceramic substrate green bodies; (2) after step-by-step vacuumization, debinding is performed in a nitrogen atmosphere or a reducing atmosphere at 500° C. to 900° C.; (3) gas pressure sintering is then performed in a nitrogen atmosphere at 1800° C. to 2000° C., completing the batch preparation of the high-property silicon nitride ceramic substrate.

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BATCH SINTERING METHOD FOR HIGH-PROPERTY SILICON NITRIDE CERAMIC SUBSTRATE

ZHANG HUI / LIU XUEJIAN / JIANG JINDI / YAO XIUMIN / HUANG ZHENGREN / CHEN ZHONGMING / HUANG JIAN

The present disclosure relates to a batch sintering method for a high-property silicon nitride ceramic substrate. The batch sintering method includes: (1) silicon nitride ceramic substrate green bodies are stacked and put into a boron nitride crucible, and a layer of boron nitride powder is applied between adjacent silicon nitride ceramic substrate green bodies; (2) after step-by-step vacuumization, debinding is performed in a nitrogen atmosphere or a reducing atmosphere at 500° C. to 900° C.; (3) gas pressure sintering is then performed in a nitrogen atmosphere at 1800° C. to 2000° C., completing the batch preparation of the high-property silicon nitride ceramic substrate.

BATCH SINTERING METHOD FOR HIGH-PROPERTY SILICON NITRIDE CERAMIC SUBSTRATE

ZHANG HUI / LIU XUEJIAN / JIANG JINDI / YAO XIUMIN / HUANG ZHENGREN / CHEN ZHONGMING / HUANG JIAN

The present disclosure relates to a batch sintering method for a high-property silicon nitride ceramic substrate. The batch sintering method includes: (1) silicon nitride ceramic substrate green bodies are stacked and put into a boron nitride crucible, and a layer of boron nitride powder is applied between adjacent silicon nitride ceramic substrate green bodies; (2) after step-by-step vacuumization, debinding is performed in a nitrogen atmosphere or a reducing atmosphere at 500° C. to 900° C.; (3) gas pressure sintering is then performed in a nitrogen atmosphere at 1800° C. to 2000° C., completing the batch preparation of the high-property silicon nitride ceramic substrate.

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Titel:

BATCH SINTERING METHOD FOR HIGH-PROPERTY SILICON NITRIDE CERAMIC SUBSTRATE

Beteiligte:

ZHANG HUI (Autor:in) / LIU XUEJIAN (Autor:in) / JIANG JINDI (Autor:in) / YAO XIUMIN (Autor:in) / HUANG ZHENGREN (Autor:in) / CHEN ZHONGMING (Autor:in) / HUANG JIAN (Autor:in)

Erscheinungsdatum:

29.02.2024

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: C04B Kalk , LIME

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