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The invention relates to a sintering aid, a silicon nitride substrate and a preparation method and application of the silicon nitride substrate. The sintering aid comprises MgSiN2, a rare earth oxide and zirconium hydride. The sintering aid is used in the preparation process of the silicon nitride substrate, introduction of oxygen impurities in the sintering aid can be reduced, sintering compactness is promoted, the heat conductivity and bending strength of the silicon nitride substrate can be improved, the sintering aid can react with the oxygen impurities to purify crystal lattices, and therefore the heat conductivity of the silicon nitride substrate can be further improved.
本申请涉及一种烧结助剂、氮化硅基板及其制备方法、应用。烧结助剂包括MgSiN2、稀土氧化物以及氢化锆。将烧结助剂用于氮化硅基板的制备工艺中,可减少烧结助剂中氧杂质的引入,促进烧结致密,有利于提高氮化硅基板的热导率和抗弯强度,而且烧结助剂本身也可以与氧杂质反应,净化晶格,从而可以进一步提高氮化硅基板的热导率。
The invention relates to a sintering aid, a silicon nitride substrate and a preparation method and application of the silicon nitride substrate. The sintering aid comprises MgSiN2, a rare earth oxide and zirconium hydride. The sintering aid is used in the preparation process of the silicon nitride substrate, introduction of oxygen impurities in the sintering aid can be reduced, sintering compactness is promoted, the heat conductivity and bending strength of the silicon nitride substrate can be improved, the sintering aid can react with the oxygen impurities to purify crystal lattices, and therefore the heat conductivity of the silicon nitride substrate can be further improved.
本申请涉及一种烧结助剂、氮化硅基板及其制备方法、应用。烧结助剂包括MgSiN2、稀土氧化物以及氢化锆。将烧结助剂用于氮化硅基板的制备工艺中,可减少烧结助剂中氧杂质的引入,促进烧结致密,有利于提高氮化硅基板的热导率和抗弯强度,而且烧结助剂本身也可以与氧杂质反应,净化晶格,从而可以进一步提高氮化硅基板的热导率。
Sintering aid, silicon nitride substrate and preparation method and application of silicon nitride substrate
烧结助剂、氮化硅基板及其制备方法、应用
YAO HUA (Autor:in)
09.02.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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