Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation process of tungsten-doped indium oxide target material
The invention provides a preparation process of a tungsten-doped indium oxide target material. The process comprises the steps of material mixing, grinding, slurry forming, granulating, forming, firing and the like. The preparation process of the tungsten-doped indium oxide target material provided by the invention comprises the following main raw materials: micron-sized WO3 powder and In2O3 powder, and the weight ratio of the WO3 powder to the In2O3 powder is 2-10% (wt%). The method comprises the following steps: performing grinding in a high-density polyurethane nano sand mill for 6-12 hours to form slurry with the solid content of 40%-70%, preparing the slurry into spherical mixed powder with a particle size of -80 meshes to +200 meshes through a spray drying granulation tower, filling a rubber mold with the prepared WO3 and In2O3 mixed spherical powder for cold isostatic pressing, processing into a target blank with a certain shape, putting the target blank into a sintering furnace with a sintering temperature of 1300-1600 DEG C and an oxygen atmosphere pressure of 1.0*10<5> Pa to 1.0*10<8> Pa, and performing sintering for 5-12 hours to obtain the tungsten-doped indium oxide ceramic target material with high density and low resistivity.
本发明提供了一种掺钨氧化铟靶材的制备工艺，包括：材料混合、研磨、形成浆料、造粒、成型和烧制等步骤，本发明提供的掺钨氧化铟靶材的制备工艺，主要原料由微米级WO3粉和In2O3粉组成，WO3粉在两种粉占重量比为2～10％(wt)，通过高密度聚氨酯纳米砂磨机研磨6～12小时形成固含量为40％～70％的浆料，在经过喷雾干燥造粒塔把浆料制成颗粒大小为‑80目～+200目的球形混合粉，制成的WO3和In2O3混合球形粉填充在橡胶模具里冷等静压成型，经过加工成一定形状的靶坯，靶坯装入烧结温度为1300℃～1600℃，氧气氛压力1.0×105Pa～1.0×108Pa的烧结炉中烧结5小时～12小时，得到高密度，低电阻率的掺钨氧化铟陶瓷靶材。
Preparation process of tungsten-doped indium oxide target material
The invention provides a preparation process of a tungsten-doped indium oxide target material. The process comprises the steps of material mixing, grinding, slurry forming, granulating, forming, firing and the like. The preparation process of the tungsten-doped indium oxide target material provided by the invention comprises the following main raw materials: micron-sized WO3 powder and In2O3 powder, and the weight ratio of the WO3 powder to the In2O3 powder is 2-10% (wt%). The method comprises the following steps: performing grinding in a high-density polyurethane nano sand mill for 6-12 hours to form slurry with the solid content of 40%-70%, preparing the slurry into spherical mixed powder with a particle size of -80 meshes to +200 meshes through a spray drying granulation tower, filling a rubber mold with the prepared WO3 and In2O3 mixed spherical powder for cold isostatic pressing, processing into a target blank with a certain shape, putting the target blank into a sintering furnace with a sintering temperature of 1300-1600 DEG C and an oxygen atmosphere pressure of 1.0*10<5> Pa to 1.0*10<8> Pa, and performing sintering for 5-12 hours to obtain the tungsten-doped indium oxide ceramic target material with high density and low resistivity.
本发明提供了一种掺钨氧化铟靶材的制备工艺，包括：材料混合、研磨、形成浆料、造粒、成型和烧制等步骤，本发明提供的掺钨氧化铟靶材的制备工艺，主要原料由微米级WO3粉和In2O3粉组成，WO3粉在两种粉占重量比为2～10％(wt)，通过高密度聚氨酯纳米砂磨机研磨6～12小时形成固含量为40％～70％的浆料，在经过喷雾干燥造粒塔把浆料制成颗粒大小为‑80目～+200目的球形混合粉，制成的WO3和In2O3混合球形粉填充在橡胶模具里冷等静压成型，经过加工成一定形状的靶坯，靶坯装入烧结温度为1300℃～1600℃，氧气氛压力1.0×105Pa～1.0×108Pa的烧结炉中烧结5小时～12小时，得到高密度，低电阻率的掺钨氧化铟陶瓷靶材。
Preparation process of tungsten-doped indium oxide target material
一种掺钨氧化铟靶材的制备工艺
GE WEI (Autor:in) / JIA ZEXIA (Autor:in) / GU JIANGUO (Autor:in) / YIN KAI (Autor:in) / ZHANG LIXIN (Autor:in)
08.06.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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