Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of indium tungsten oxide target material
The invention discloses a preparation method of an indium tungsten oxide target material. The preparation method comprises the following steps: (1) mixing indium oxide powder and tungsten oxide powder; (2) uniformly mixing a polyacrylic acid dispersant and deionized water, and adjusting the pH value of the mixed solution to 8-10; (3) performing wet grinding and mixing on the mixed powder prepared in the step (1) and the mixed liquid prepared in the step (2), and then performing defoaming treatment; (4) pouring the slurry subjected to bubble removal in the step (3) into a mold for sealing treatment, and adjusting the vacuum degree of the mold and the air pressure of an air compression cavity for filter pressing dehydration to obtain an indium tungsten oxide target material biscuit; and (5) the indium tungsten oxide target material biscuit is subjected to standing, drying and sintering densification treatment, and the indium tungsten oxide target material is obtained. According to the preparation method, the target material biscuit is prepared through the mold in a filter pressing and grouting mode, then degreasing and sintering are conducted in the high-temperature furnace, the high-density indium tungsten oxide target material is obtained, the defects of deformation, cracking and the like do not exist in the preparation process, and the target material is single in phase, fine in crystal grain and uniform in component.
本发明公开了一种氧化铟钨靶材的制备方法：(1)将氧化铟粉体和氧化钨粉体混合；(2)将聚丙烯酸类分散剂和去离子水混合均匀，并调节混合液的pH值至8～10；(3)将步骤(1)制备的混合粉体与步骤(2)制备的混合液体湿磨混合，然后除泡处理；(4)将步骤(3)除泡后的浆料浇入模具中进行密封处理，调节模具的真空度和空气压缩腔的气压进行压滤脱水，得到氧化铟钨靶材素坯；(5)将氧化铟钨靶材素坯静置、干燥、烧结致密化处理，得到氧化铟钨靶材。本发明通过模具、采用压滤注浆的方式制备靶材素坯，然后在高温炉中进行脱脂、烧结，得到高致密的氧化铟钨靶材，制备过程中无变形和开裂等缺陷，靶材的物相单一、晶粒细小且成分均匀。
Preparation method of indium tungsten oxide target material
The invention discloses a preparation method of an indium tungsten oxide target material. The preparation method comprises the following steps: (1) mixing indium oxide powder and tungsten oxide powder; (2) uniformly mixing a polyacrylic acid dispersant and deionized water, and adjusting the pH value of the mixed solution to 8-10; (3) performing wet grinding and mixing on the mixed powder prepared in the step (1) and the mixed liquid prepared in the step (2), and then performing defoaming treatment; (4) pouring the slurry subjected to bubble removal in the step (3) into a mold for sealing treatment, and adjusting the vacuum degree of the mold and the air pressure of an air compression cavity for filter pressing dehydration to obtain an indium tungsten oxide target material biscuit; and (5) the indium tungsten oxide target material biscuit is subjected to standing, drying and sintering densification treatment, and the indium tungsten oxide target material is obtained. According to the preparation method, the target material biscuit is prepared through the mold in a filter pressing and grouting mode, then degreasing and sintering are conducted in the high-temperature furnace, the high-density indium tungsten oxide target material is obtained, the defects of deformation, cracking and the like do not exist in the preparation process, and the target material is single in phase, fine in crystal grain and uniform in component.
本发明公开了一种氧化铟钨靶材的制备方法：(1)将氧化铟粉体和氧化钨粉体混合；(2)将聚丙烯酸类分散剂和去离子水混合均匀，并调节混合液的pH值至8～10；(3)将步骤(1)制备的混合粉体与步骤(2)制备的混合液体湿磨混合，然后除泡处理；(4)将步骤(3)除泡后的浆料浇入模具中进行密封处理，调节模具的真空度和空气压缩腔的气压进行压滤脱水，得到氧化铟钨靶材素坯；(5)将氧化铟钨靶材素坯静置、干燥、烧结致密化处理，得到氧化铟钨靶材。本发明通过模具、采用压滤注浆的方式制备靶材素坯，然后在高温炉中进行脱脂、烧结，得到高致密的氧化铟钨靶材，制备过程中无变形和开裂等缺陷，靶材的物相单一、晶粒细小且成分均匀。
Preparation method of indium tungsten oxide target material
一种氧化铟钨靶材的制备方法
MEI FANGSHENG (Autor:in) / LIN JIANGUO (Autor:in)
01.11.2022
Patent
Elektronische Ressource
Chinesisch
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