Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Tungsten indium oxide target material and preparation method thereof
The invention belongs to the field of semiconductors, and particularly relates to a preparation method of an indium tungsten oxide target material, which comprises the following steps: step 1, mixing first powder with second powder to obtain mixed powder, the particle size of the first powder being 90-110 [mu] m, and the particle size of the second powder being 10-35 [mu] m; the weight ratio of the first powder to the second powder is 1: 8-1: 18; the metal oxides in the first powder and the second powder are composed of indium oxide and tungsten oxide; 2, the mixed powder is sintered for the first time, a primary sintered product is obtained, and the sintering temperature ranges from 800 DEG C to 1000 DEG C; 3, the primary sintering product is subjected to hot press molding, and a plain blank is obtained; and 4, carrying out secondary sintering on the blank to obtain the indium tungsten oxide target material. The crystal particle size of the target material is 4-8 microns, and the target material has relatively high relative density and relatively low resistivity. In addition, the invention also provides an indium tungsten oxide target material.
本发明属于半导体领域，具体涉及一种氧化铟钨靶材的制备方法，包括如下步骤：步骤1：将第一粉体和第二粉体混合，得到混合粉体，第一粉体的粒径为90‑110μm，第二粉体的粒径为10‑35μm；第一粉体和第二粉体的重量比为1:8～1:18；第一粉体和第二粉体中的金属氧化物均由氧化铟、氧化钨组成；步骤2：将混合粉末进行第一次烧结，得到一次烧结产物，烧结温度为800～1000℃；步骤3：将一次烧结产物进行热压成型，得到素胚；步骤4：将素胚进行第二次烧结，得到氧化铟钨靶材。该靶材的晶体粒径尺寸为4～8um，具有较高的相对密度以及较低的电阻率。此外，本发明还提供了一种氧化铟钨靶材。
Tungsten indium oxide target material and preparation method thereof
The invention belongs to the field of semiconductors, and particularly relates to a preparation method of an indium tungsten oxide target material, which comprises the following steps: step 1, mixing first powder with second powder to obtain mixed powder, the particle size of the first powder being 90-110 [mu] m, and the particle size of the second powder being 10-35 [mu] m; the weight ratio of the first powder to the second powder is 1: 8-1: 18; the metal oxides in the first powder and the second powder are composed of indium oxide and tungsten oxide; 2, the mixed powder is sintered for the first time, a primary sintered product is obtained, and the sintering temperature ranges from 800 DEG C to 1000 DEG C; 3, the primary sintering product is subjected to hot press molding, and a plain blank is obtained; and 4, carrying out secondary sintering on the blank to obtain the indium tungsten oxide target material. The crystal particle size of the target material is 4-8 microns, and the target material has relatively high relative density and relatively low resistivity. In addition, the invention also provides an indium tungsten oxide target material.
本发明属于半导体领域，具体涉及一种氧化铟钨靶材的制备方法，包括如下步骤：步骤1：将第一粉体和第二粉体混合，得到混合粉体，第一粉体的粒径为90‑110μm，第二粉体的粒径为10‑35μm；第一粉体和第二粉体的重量比为1:8～1:18；第一粉体和第二粉体中的金属氧化物均由氧化铟、氧化钨组成；步骤2：将混合粉末进行第一次烧结，得到一次烧结产物，烧结温度为800～1000℃；步骤3：将一次烧结产物进行热压成型，得到素胚；步骤4：将素胚进行第二次烧结，得到氧化铟钨靶材。该靶材的晶体粒径尺寸为4～8um，具有较高的相对密度以及较低的电阻率。此外，本发明还提供了一种氧化铟钨靶材。
Tungsten indium oxide target material and preparation method thereof
一种氧化铟钨靶材及其制备方法
TAN HONGLEI (Autor:in) / SHAO XUELIANG (Autor:in) / LI KAIJIE (Autor:in) / WANG QIFENG (Autor:in)
09.07.2024
Patent
Elektronische Ressource
Chinesisch
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