Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Doped cadmium oxide target material and preparation method and application thereof
The invention discloses an indium oxide doped cadmium oxide target material as well as a preparation method and application thereof. The preparation method of the doped cadmium oxide target material comprises the following steps: (1) carrying out ball milling on cadmium oxide powder and indium oxide powder according to the mass ratio of CdO to In2O3 being (95-99.5):(0.5-5) for uniform mixing; (2) putting the mixture obtained in the step (1) into a mold, and then putting the mold into a vacuum hot pressing furnace; (3) vacuumizing the vacuum hot pressing furnace, when the vacuum degree is smaller than or equal to 10 Pa, starting heating, conducting heat preservation for 1-3 h at the temperature of 700-800 DEG C, starting pressurization after heat preservation is conducted for 10-50 min through pressurization pressure of 10-40 MPa, keeping the pressure maintaining time for 20-40 min, and when the temperature is reduced to 400-600 DEG C, reducing the pressure to 3-15 MPa; and (4) when the temperature is reduced to room temperature, opening a furnace door, and conducting demolding to obtain the doped cadmium oxide target material. The grain size of the target material is smaller than 10 micrometers, the bending strength is larger than 80 MPa, the sputtering effect is good, when the target material is used for preparing the CdO-based conductive film through sputtering, the film can contain In, the light-transmitting wave band of the film is widened, other impurities cannot be introduced, and the requirement for the sputtering condition is low.
本发明公开了一种氧化铟掺杂氧化镉的靶材及其制备方法与应用，所述掺杂氧化镉靶材的制备方法包括如下步骤：(1)将氧化镉粉末和氧化铟粉末按CdO:In2O3＝95～99.5:0.5～5的质量比进行球磨混合均匀；(2)将步骤(1)所得混料装入模具中，然后放入真空热压炉中；(3)对真空热压炉进行抽真空，当真空度≤10Pa后，开启加热，700～800℃保温1～3h，其中，保温10～50min后开始加压，加压压力为10～40MPa，保压时间为20～40min，当温度降至400～600℃后，将压力降至3～15MPa；(4)当温度降至室温后，开炉门，脱模，即得所述掺杂氧化镉靶材。本发明的靶材的晶粒尺寸＜10μm，抗弯强度＞80MPa，溅射效果好，用于溅射制备CdO基导电薄膜时可使薄膜中含In，扩宽了薄膜的透光波段，不会引入其它杂质，溅射条件的要求低。
Doped cadmium oxide target material and preparation method and application thereof
The invention discloses an indium oxide doped cadmium oxide target material as well as a preparation method and application thereof. The preparation method of the doped cadmium oxide target material comprises the following steps: (1) carrying out ball milling on cadmium oxide powder and indium oxide powder according to the mass ratio of CdO to In2O3 being (95-99.5):(0.5-5) for uniform mixing; (2) putting the mixture obtained in the step (1) into a mold, and then putting the mold into a vacuum hot pressing furnace; (3) vacuumizing the vacuum hot pressing furnace, when the vacuum degree is smaller than or equal to 10 Pa, starting heating, conducting heat preservation for 1-3 h at the temperature of 700-800 DEG C, starting pressurization after heat preservation is conducted for 10-50 min through pressurization pressure of 10-40 MPa, keeping the pressure maintaining time for 20-40 min, and when the temperature is reduced to 400-600 DEG C, reducing the pressure to 3-15 MPa; and (4) when the temperature is reduced to room temperature, opening a furnace door, and conducting demolding to obtain the doped cadmium oxide target material. The grain size of the target material is smaller than 10 micrometers, the bending strength is larger than 80 MPa, the sputtering effect is good, when the target material is used for preparing the CdO-based conductive film through sputtering, the film can contain In, the light-transmitting wave band of the film is widened, other impurities cannot be introduced, and the requirement for the sputtering condition is low.
本发明公开了一种氧化铟掺杂氧化镉的靶材及其制备方法与应用，所述掺杂氧化镉靶材的制备方法包括如下步骤：(1)将氧化镉粉末和氧化铟粉末按CdO:In2O3＝95～99.5:0.5～5的质量比进行球磨混合均匀；(2)将步骤(1)所得混料装入模具中，然后放入真空热压炉中；(3)对真空热压炉进行抽真空，当真空度≤10Pa后，开启加热，700～800℃保温1～3h，其中，保温10～50min后开始加压，加压压力为10～40MPa，保压时间为20～40min，当温度降至400～600℃后，将压力降至3～15MPa；(4)当温度降至室温后，开炉门，脱模，即得所述掺杂氧化镉靶材。本发明的靶材的晶粒尺寸＜10μm，抗弯强度＞80MPa，溅射效果好，用于溅射制备CdO基导电薄膜时可使薄膜中含In，扩宽了薄膜的透光波段，不会引入其它杂质，溅射条件的要求低。
Doped cadmium oxide target material and preparation method and application thereof
一种掺杂氧化镉靶材及其制备方法与应用
WEN CHONGBIN (Autor:in) / ZHU LIU (Autor:in) / TONG PEIYUN (Autor:in) / ZENG CHENGLIANG (Autor:in) / YU FANG (Autor:in)
10.08.2021
Patent
Elektronische Ressource
Chinesisch
Phosphorus-doped cadmium selenide target material and preparation method thereof
| Europäisches Patentamt | 2024
Preparation method of antimony-doped cadmium telluride target material
| Europäisches Patentamt | 2023
Tungsten-doped indium oxide target material and preparation method and application thereof
| Europäisches Patentamt | 2023
Cadmium sulfide target material and preparation method thereof
| Europäisches Patentamt | 2023
Cadmium telluride target material and preparation method thereof
| Europäisches Patentamt | 2024