Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of antimony-doped cadmium telluride target material
The invention belongs to the field of material preparation, and discloses a preparation method of an antimony-doped cadmium telluride target material. Comprising the following steps: (1) uniformly mixing CdTe powder and Sb2Te3 powder, wherein the proportion of the Sb2Te3 powder is 0.5-10 wt%; (2) carrying out heating reaction on the uniformly mixed powder to obtain an antimony-doped cadmium telluride target material; the heating reaction specifically comprises the following steps: in a first stage, heating to 300-400 DEG C under a vacuum condition, and preserving heat for 30-50 minutes; and a second stage: under a vacuum condition, heating to 550-600 DEG C, preserving heat for 60-90 minutes, starting to pressurize to 80-90 Mpa after heating to the highest temperature in the stage, and maintaining the pressure until the heat preservation time is ended. The cadmium telluride doped target material is prepared through vacuum hot pressing sintering, the technological process is short, operation is easy and convenient, the oxygen content of the obtained cadmium telluride doped target material is low, and the relative density of the target material is high.
本发明属于材料制备领域，公开了一种锑掺杂碲化镉靶材的制备方法。包括以下步骤：（1）将CdTe粉末、Sb2Te3粉末混合均匀，其中Sb2Te3粉末占比0.5~10wt%；（2）将混合均匀后的粉末进行加热反应，得到锑掺杂碲化镉靶材；所述加热反应具体为：一阶段：真空条件下，升温到300~400℃，保温30~50min；二阶段：真空条件下，升温到550~600℃，保温60~90min，该阶段在升温到最高温度后开始加压至80~90Mpa，并保压至保温时间结束。本发明采用真空热压烧结制备碲化镉掺杂靶材，工艺流程短，操作简便，所得碲化镉掺杂靶材的氧含量低，靶材相对密度高。
Preparation method of antimony-doped cadmium telluride target material
The invention belongs to the field of material preparation, and discloses a preparation method of an antimony-doped cadmium telluride target material. Comprising the following steps: (1) uniformly mixing CdTe powder and Sb2Te3 powder, wherein the proportion of the Sb2Te3 powder is 0.5-10 wt%; (2) carrying out heating reaction on the uniformly mixed powder to obtain an antimony-doped cadmium telluride target material; the heating reaction specifically comprises the following steps: in a first stage, heating to 300-400 DEG C under a vacuum condition, and preserving heat for 30-50 minutes; and a second stage: under a vacuum condition, heating to 550-600 DEG C, preserving heat for 60-90 minutes, starting to pressurize to 80-90 Mpa after heating to the highest temperature in the stage, and maintaining the pressure until the heat preservation time is ended. The cadmium telluride doped target material is prepared through vacuum hot pressing sintering, the technological process is short, operation is easy and convenient, the oxygen content of the obtained cadmium telluride doped target material is low, and the relative density of the target material is high.
本发明属于材料制备领域，公开了一种锑掺杂碲化镉靶材的制备方法。包括以下步骤：（1）将CdTe粉末、Sb2Te3粉末混合均匀，其中Sb2Te3粉末占比0.5~10wt%；（2）将混合均匀后的粉末进行加热反应，得到锑掺杂碲化镉靶材；所述加热反应具体为：一阶段：真空条件下，升温到300~400℃，保温30~50min；二阶段：真空条件下，升温到550~600℃，保温60~90min，该阶段在升温到最高温度后开始加压至80~90Mpa，并保压至保温时间结束。本发明采用真空热压烧结制备碲化镉掺杂靶材，工艺流程短，操作简便，所得碲化镉掺杂靶材的氧含量低，靶材相对密度高。
Preparation method of antimony-doped cadmium telluride target material
一种锑掺杂碲化镉靶材的制备方法
WEN CHONGBIN (Autor:in) / ZHU LIU (Autor:in) / TONG PEIYUN (Autor:in)
12.12.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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