Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Phosphorus-doped cadmium selenide target material and preparation method thereof
The invention discloses a phosphorus-doped cadmium selenide target material and a preparation method thereof, and belongs to the technical field of semiconductor materials.The preparation method comprises the steps that cadmium powder and red phosphorus powder are evenly mixed and then subjected to two-stage heating and heat preservation treatment at the specific temperature, cadmium phosphide powder suitable for preparing phosphorus-doped cadmium selenide is obtained and then evenly mixed with cadmium selenide powder, and the phosphorus-doped cadmium selenide target material is obtained. Putting into a vacuum hot pressing furnace, carrying out two-stage heating and heat preservation treatment under specific air pressure and temperature, then carrying out hot pressing, and finally cooling to room temperature to obtain the phosphorus-doped cadmium selenide target material. The phosphorus-doped cadmium selenide target material is high in relative density, uniform in component, free of surface defects, free of pores and white spots, and low in free matter and oxygen content.
本发明公开了一种掺磷硒化镉靶材及其制备方法，属于半导体材料技术领域，本发明将镉粉和红磷粉混合均匀，而后在特定的温度下经过两段加热保温处理，得到适用于制备掺磷硒化镉的磷化镉粉，而后将其与硒化镉粉混合均匀，放进真空热压炉中，在特定气压以及温度下经过两段加热保温处理，而后热压，最后冷却至室温，得到掺磷硒化镉靶材；所述的掺磷硒化镉靶材相对密度高，成分均匀，表面无缺陷，不存在气孔和白色斑点，同时所述的掺磷硒化镉靶材游离物和氧含量低。
Phosphorus-doped cadmium selenide target material and preparation method thereof
The invention discloses a phosphorus-doped cadmium selenide target material and a preparation method thereof, and belongs to the technical field of semiconductor materials.The preparation method comprises the steps that cadmium powder and red phosphorus powder are evenly mixed and then subjected to two-stage heating and heat preservation treatment at the specific temperature, cadmium phosphide powder suitable for preparing phosphorus-doped cadmium selenide is obtained and then evenly mixed with cadmium selenide powder, and the phosphorus-doped cadmium selenide target material is obtained. Putting into a vacuum hot pressing furnace, carrying out two-stage heating and heat preservation treatment under specific air pressure and temperature, then carrying out hot pressing, and finally cooling to room temperature to obtain the phosphorus-doped cadmium selenide target material. The phosphorus-doped cadmium selenide target material is high in relative density, uniform in component, free of surface defects, free of pores and white spots, and low in free matter and oxygen content.
本发明公开了一种掺磷硒化镉靶材及其制备方法，属于半导体材料技术领域，本发明将镉粉和红磷粉混合均匀，而后在特定的温度下经过两段加热保温处理，得到适用于制备掺磷硒化镉的磷化镉粉，而后将其与硒化镉粉混合均匀，放进真空热压炉中，在特定气压以及温度下经过两段加热保温处理，而后热压，最后冷却至室温，得到掺磷硒化镉靶材；所述的掺磷硒化镉靶材相对密度高，成分均匀，表面无缺陷，不存在气孔和白色斑点，同时所述的掺磷硒化镉靶材游离物和氧含量低。
Phosphorus-doped cadmium selenide target material and preparation method thereof
一种掺磷硒化镉靶材及其制备方法
XU XIANGYAN (Autor:in) / HE TINGSHUAI (Autor:in) / WEN CHONGBIN (Autor:in) / TONG PEIYUN (Autor:in)
01.03.2024
Patent
Elektronische Ressource
Chinesisch
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