Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
TUNGSTEN OXIDE SPUTTERING TARGET
The present invention is characterized in that a W18O49 peak is confirmed by X-ray diffraction analysis in a sputtering surface and a cross section orthogonal to the sputtering surface, the ratio IS(103)/IS(010) of the diffraction intensity IS(103) of the (103) plane and the diffraction intensity IS(010) of the (010) plane of W18O49 in the sputtering surface is 0.57 or greater, the ratio IC(103)/IC(010) of the diffraction intensity IC(103) of the (103) plane and the diffraction intensity IC(010) of the (010) plane of W18O49 in the cross section is 0.38 or less, and the area ratio of a W18O49 phase in the surface parallel to the sputtering surface is 37% or greater.
本发明的特征在于，通过溅射面及与所述溅射面正交的截面的X射线衍射分析，确认到W18O49的峰，并且所述溅射面的W18O49的(103)面的衍射强度IS(103)与(010)面的衍射强度IS(010)之比IS(103)/IS(010)为0.57以上，所述截面的W18O49的(103)面的衍射强度IC(103)与(010)面的衍射强度IC(010)之比IC(103)/IC(010)为0.38以下，与溅射面平行的面的所述W18O49相的面积率为37％以上。
TUNGSTEN OXIDE SPUTTERING TARGET
The present invention is characterized in that a W18O49 peak is confirmed by X-ray diffraction analysis in a sputtering surface and a cross section orthogonal to the sputtering surface, the ratio IS(103)/IS(010) of the diffraction intensity IS(103) of the (103) plane and the diffraction intensity IS(010) of the (010) plane of W18O49 in the sputtering surface is 0.57 or greater, the ratio IC(103)/IC(010) of the diffraction intensity IC(103) of the (103) plane and the diffraction intensity IC(010) of the (010) plane of W18O49 in the cross section is 0.38 or less, and the area ratio of a W18O49 phase in the surface parallel to the sputtering surface is 37% or greater.
本发明的特征在于，通过溅射面及与所述溅射面正交的截面的X射线衍射分析，确认到W18O49的峰，并且所述溅射面的W18O49的(103)面的衍射强度IS(103)与(010)面的衍射强度IS(010)之比IS(103)/IS(010)为0.57以上，所述截面的W18O49的(103)面的衍射强度IC(103)与(010)面的衍射强度IC(010)之比IC(103)/IC(010)为0.38以下，与溅射面平行的面的所述W18O49相的面积率为37％以上。
TUNGSTEN OXIDE SPUTTERING TARGET
氧化钨溅射靶
YAMAGUCHI TAKESHI (Autor:in) / IO KENSUKE (Autor:in) / KAWAMURA SHIORI (Autor:in) / UMEMOTO KEITA (Autor:in)
21.09.2021
Patent
Elektronische Ressource
Chinesisch