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IWO target material and preparation method and application thereof
The invention discloses an IWO target material and a preparation method and application thereof. The IWO target material comprises indium oxide and tungsten oxide, the content of the tungsten oxide is 0.1-0.15 in terms of the atomic ratio of W/(In+W); the density of the IWO target material is 6.5 g/cm<3> to 7.18 g/cm<3>. The IWO target material disclosed by the invention is good in conductivity and high in light transmittance; meanwhile, the problem of low production efficiency caused by abnormal discharge due to poisoning nodules generated in the coating process is also solved; when the target material is applied to a solar cell, the conversion efficiency of the solar cell is improved.
本发明公开了一种IWO靶材及其制备方法与应用,该靶材IWO靶材包含氧化铟和氧化钨;所述氧化钨的含量以W/(In+W)的原子数比计为0.1~0.15;所述IWO靶材的密度为6.5g/cm3~7.18g/cm3。本发明的IWO靶材,导电性好且透光率高;同时还解决镀膜过程中产生中毒结瘤问题而异常放电而造成生产效率低的问题;将本发明的靶材应用于太阳能电池中,提升了太阳能电池转化效率。
IWO target material and preparation method and application thereof
The invention discloses an IWO target material and a preparation method and application thereof. The IWO target material comprises indium oxide and tungsten oxide, the content of the tungsten oxide is 0.1-0.15 in terms of the atomic ratio of W/(In+W); the density of the IWO target material is 6.5 g/cm<3> to 7.18 g/cm<3>. The IWO target material disclosed by the invention is good in conductivity and high in light transmittance; meanwhile, the problem of low production efficiency caused by abnormal discharge due to poisoning nodules generated in the coating process is also solved; when the target material is applied to a solar cell, the conversion efficiency of the solar cell is improved.
本发明公开了一种IWO靶材及其制备方法与应用,该靶材IWO靶材包含氧化铟和氧化钨;所述氧化钨的含量以W/(In+W)的原子数比计为0.1~0.15;所述IWO靶材的密度为6.5g/cm3~7.18g/cm3。本发明的IWO靶材,导电性好且透光率高;同时还解决镀膜过程中产生中毒结瘤问题而异常放电而造成生产效率低的问题;将本发明的靶材应用于太阳能电池中,提升了太阳能电池转化效率。
IWO target material and preparation method and application thereof
一种IWO靶材及其制备方法与应用
LIU YONGCHENG (Autor:in) / CHEN MINGFEI (Autor:in) / GUO ZIXUAN (Autor:in) / XU SHENGLI (Autor:in) / JIANG CHANGJIU (Autor:in) / CHEN MINGGAO (Autor:in) / MO GUOREN (Autor:in) / WANG ZHIJIE (Autor:in) / LI YUEHUI (Autor:in)
26.10.2021
Patent
Elektronische Ressource
Chinesisch
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