Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
IWZO target material and preparation method and application thereof
The invention discloses an IWZO target material as well as a preparation method and application thereof. The IWZO target material comprises In, W, Zn and O, and the atomic molar ratio of In to W to Zn is 1: N: N * M, wherein N is more than or equal to 0.02 and less than 0.0721; m is more than or equal to 0.8 and less than 1.2. The IWZO target material prepared according to the atomic ratio is high in density, good in color uniformity and free of nodulation and point discharge in the continuous use process. In addition, the oxide film prepared by adopting the IWZO target material has low resistivity, low surface roughness and high transmittance, and can be widely used for preparing heterojunction solar cells, displays or optical components and the like.
本发明公开了一种IWZO靶材及其制备方法与应用。本发明的IWZO靶材，包含In、W、Zn、O，以原子摩尔比计，In：W：Zn＝1：N：N×M；其中，所述N满足0.02≤N＜0.0721；所述M满足0.8≤M＜1.2。采用本发明原子比制得的IWZO靶材密度高、颜色均匀性好，且在连续使用过程中不结瘤、不产生尖端放电。此外，采用该IWZO靶材制得的氧化物薄膜具有低电阻率、低表面粗糙度和高透过率，可广泛用于异质结太阳能电池、显示器或光学元器件等的制备。
IWZO target material and preparation method and application thereof
The invention discloses an IWZO target material as well as a preparation method and application thereof. The IWZO target material comprises In, W, Zn and O, and the atomic molar ratio of In to W to Zn is 1: N: N * M, wherein N is more than or equal to 0.02 and less than 0.0721; m is more than or equal to 0.8 and less than 1.2. The IWZO target material prepared according to the atomic ratio is high in density, good in color uniformity and free of nodulation and point discharge in the continuous use process. In addition, the oxide film prepared by adopting the IWZO target material has low resistivity, low surface roughness and high transmittance, and can be widely used for preparing heterojunction solar cells, displays or optical components and the like.
本发明公开了一种IWZO靶材及其制备方法与应用。本发明的IWZO靶材，包含In、W、Zn、O，以原子摩尔比计，In：W：Zn＝1：N：N×M；其中，所述N满足0.02≤N＜0.0721；所述M满足0.8≤M＜1.2。采用本发明原子比制得的IWZO靶材密度高、颜色均匀性好，且在连续使用过程中不结瘤、不产生尖端放电。此外，采用该IWZO靶材制得的氧化物薄膜具有低电阻率、低表面粗糙度和高透过率，可广泛用于异质结太阳能电池、显示器或光学元器件等的制备。
IWZO target material and preparation method and application thereof
一种IWZO靶材及其制备方法与应用
CHEN MINGFEI (Autor:in) / WANG JINKE (Autor:in) / LIU YONGCHENG (Autor:in) / GUO ZIXUAN (Autor:in) / XU SHENGLI (Autor:in) / CHEN MINGGAO (Autor:in) / JIANG CHANGJIU (Autor:in) / WANG ZHIJIE (Autor:in) / MO GUOREN (Autor:in) / LI YUEHUI (Autor:in)
06.01.2023
Patent
Elektronische Ressource
Chinesisch
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