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Substrate comprising diamond layer and composite layer of diamond and silicon carbide and optionally silicon
The multilayer substrate includes a diamond layer CVD grown on the composite layer. The composite layer includes diamond and particles of silicon carbide and optionally silicon. The loading level (by volume) of the diamond in the composite layer may be > = 5%, > = 20%, > = 40%, or > = 60%. The multilayer substrate can be used as an optical device; a detector for detecting radiation particles or electromagnetic waves; a device for cutting, drilling, machining, milling, grinding, polishing, coating, bonding, or brazing; a brake device; a sealing strip; a heat conductor; an electromagnetic wave conductor; a chemically inert device for use in a corrosive environment, a strong oxidizing environment, or a strong reducing environment at elevated temperature or at low temperature conditions; or an apparatus for polishing or planarizing other devices, wafers or films.
多层基板包括在复合层上CVD生长的金刚石层。该复合层包括金刚石和碳化硅与任选的硅的颗粒。该复合层中的金刚石的载荷水平(按体积计)可为≥5%、≥20%、≥40%、或≥60%。该多层基板能够用作光学器件;用于检测辐射粒子或电磁波的检测器;用于切割、钻孔、机械加工、碾磨、研磨、抛光、涂布、粘结、或钎焊的装置;制动装置;密封条;导热体;电磁波导体;在升高的温度下或在低温条件下用于腐蚀性环境、强氧化性环境、或强还原性环境的化学惰性装置;或用于抛光或平坦化其它器件、晶圆或膜的装置。
Substrate comprising diamond layer and composite layer of diamond and silicon carbide and optionally silicon
The multilayer substrate includes a diamond layer CVD grown on the composite layer. The composite layer includes diamond and particles of silicon carbide and optionally silicon. The loading level (by volume) of the diamond in the composite layer may be > = 5%, > = 20%, > = 40%, or > = 60%. The multilayer substrate can be used as an optical device; a detector for detecting radiation particles or electromagnetic waves; a device for cutting, drilling, machining, milling, grinding, polishing, coating, bonding, or brazing; a brake device; a sealing strip; a heat conductor; an electromagnetic wave conductor; a chemically inert device for use in a corrosive environment, a strong oxidizing environment, or a strong reducing environment at elevated temperature or at low temperature conditions; or an apparatus for polishing or planarizing other devices, wafers or films.
多层基板包括在复合层上CVD生长的金刚石层。该复合层包括金刚石和碳化硅与任选的硅的颗粒。该复合层中的金刚石的载荷水平(按体积计)可为≥5%、≥20%、≥40%、或≥60%。该多层基板能够用作光学器件;用于检测辐射粒子或电磁波的检测器;用于切割、钻孔、机械加工、碾磨、研磨、抛光、涂布、粘结、或钎焊的装置;制动装置;密封条;导热体;电磁波导体;在升高的温度下或在低温条件下用于腐蚀性环境、强氧化性环境、或强还原性环境的化学惰性装置;或用于抛光或平坦化其它器件、晶圆或膜的装置。
Substrate comprising diamond layer and composite layer of diamond and silicon carbide and optionally silicon
包括金刚石层以及金刚石和碳化硅以及任选的硅的复合层的基板
XU WEN-QING (Autor:in) / EISSLER ELGIN E (Autor:in) / LIU CHENG (Autor:in) / TANNER CHARLES D (Autor:in) / KRAISINGER CHARLES J (Autor:in) / AGHAYAN MICHAEL (Autor:in)
29.04.2022
Patent
Elektronische Ressource
Chinesisch
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