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Copper-ceramic bonded body, insulated circuit board, method for producing copper-ceramic bonded body, and method for producing insulated circuit board
A copper-ceramic bonded body obtained by bonding a copper member (12) comprising copper or a copper alloy and a ceramic member (11) comprising a nitrogen-containing ceramic, in which an Mg solid solution layer in which Mg is solid-solved is formed in a Cu matrix at the bonding interface between the copper member (12) and the ceramic member (11), and an active metal nitride layer (41) is formed on the ceramic member (11) side. The active metal nitride layer (41) contains a nitride of one or more active metals selected from the group consisting of Ti, Zr, Nb, and Hf, and the thickness of the active metal nitride layer (41) is within the range of 0.05 [mu] m to 1.2 [mu] m (inclusive).
一种铜‑陶瓷接合体，通过接合由铜或铜合金构成的铜部件(12)、由含氮陶瓷构成的陶瓷部件(11)而成，在铜部件(12)与陶瓷部件(11)的接合界面中，在Cu的母相中形成固溶有Mg的Mg固溶层，并且在陶瓷部件(11)侧形成活性金属氮化物层(41)，该活性金属氮化物层(41)含有选自Ti、Zr、Nb及Hf中的一种或两种以上的活性金属的氮化物，该活性金属氮化物层(41)的厚度在0.05μm以上且1.2μm以下的范围内。
Copper-ceramic bonded body, insulated circuit board, method for producing copper-ceramic bonded body, and method for producing insulated circuit board
A copper-ceramic bonded body obtained by bonding a copper member (12) comprising copper or a copper alloy and a ceramic member (11) comprising a nitrogen-containing ceramic, in which an Mg solid solution layer in which Mg is solid-solved is formed in a Cu matrix at the bonding interface between the copper member (12) and the ceramic member (11), and an active metal nitride layer (41) is formed on the ceramic member (11) side. The active metal nitride layer (41) contains a nitride of one or more active metals selected from the group consisting of Ti, Zr, Nb, and Hf, and the thickness of the active metal nitride layer (41) is within the range of 0.05 [mu] m to 1.2 [mu] m (inclusive).
一种铜‑陶瓷接合体，通过接合由铜或铜合金构成的铜部件(12)、由含氮陶瓷构成的陶瓷部件(11)而成，在铜部件(12)与陶瓷部件(11)的接合界面中，在Cu的母相中形成固溶有Mg的Mg固溶层，并且在陶瓷部件(11)侧形成活性金属氮化物层(41)，该活性金属氮化物层(41)含有选自Ti、Zr、Nb及Hf中的一种或两种以上的活性金属的氮化物，该活性金属氮化物层(41)的厚度在0.05μm以上且1.2μm以下的范围内。
Copper-ceramic bonded body, insulated circuit board, method for producing copper-ceramic bonded body, and method for producing insulated circuit board
铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法
TERASAKI NOBUYUKI (Autor:in)
03.06.2022
Patent
Elektronische Ressource
Chinesisch
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