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BaTiO3-based X8R ceramic substrate material and preparation method thereof
The invention provides a BaTiO3-based X8R ceramic substrate material and a preparation method thereof, and belongs to the technical field of electronic materials. BaTiO3 is used as a main material; the secondary additive comprises ZnNb2O6, Nb2O5, NiO, Al2O3, SiO2, MnCO3 and oxides of one or more of rare earth elements Nd, Ce, Sm and La, the preparation method comprises the processes of material preparation, ball milling, granulation, forming and sintering, the BaTiO3-based X8R ceramic substrate material has low dielectric loss tg delta being less than or equal to 0.8%, high insulation resistivity rho being greater than or equal to 1.0 * 10 < 12 > omega.cm, a dielectric constant being 900-3000, a capacitance temperature coefficient according with the X8R standard, and a good application prospect. And the preparation method is simple, easy to control, environment-friendly and low in cost.
本发明提供一种BaTiO3基X8R陶瓷基板材料及制备方法,属于电子材料技术领域。以BaTiO3为主料;二次添加剂包括ZnNb2O6、Nb2O5、NiO、Al2O3、SiO2、MnCO3以及稀土元素Nd、Ce、Sm、La中一种或一种以上的氧化物,制备方法包括配料、球磨、造粒、成型、烧结过程,BaTiO3基X8R陶瓷基板材料具有较低的介电损耗:tgδ≤0.8%,较高的绝缘电阻率:ρ≥1.0*1012Ω·cm,介电常数为900~3000,符合X8R标准的电容温度系数,能够满足陶瓷电容器尤其是单层陶瓷电容器制作要求,制备方法简单、易控、环保、成本低廉。
BaTiO3-based X8R ceramic substrate material and preparation method thereof
The invention provides a BaTiO3-based X8R ceramic substrate material and a preparation method thereof, and belongs to the technical field of electronic materials. BaTiO3 is used as a main material; the secondary additive comprises ZnNb2O6, Nb2O5, NiO, Al2O3, SiO2, MnCO3 and oxides of one or more of rare earth elements Nd, Ce, Sm and La, the preparation method comprises the processes of material preparation, ball milling, granulation, forming and sintering, the BaTiO3-based X8R ceramic substrate material has low dielectric loss tg delta being less than or equal to 0.8%, high insulation resistivity rho being greater than or equal to 1.0 * 10 < 12 > omega.cm, a dielectric constant being 900-3000, a capacitance temperature coefficient according with the X8R standard, and a good application prospect. And the preparation method is simple, easy to control, environment-friendly and low in cost.
本发明提供一种BaTiO3基X8R陶瓷基板材料及制备方法,属于电子材料技术领域。以BaTiO3为主料;二次添加剂包括ZnNb2O6、Nb2O5、NiO、Al2O3、SiO2、MnCO3以及稀土元素Nd、Ce、Sm、La中一种或一种以上的氧化物,制备方法包括配料、球磨、造粒、成型、烧结过程,BaTiO3基X8R陶瓷基板材料具有较低的介电损耗:tgδ≤0.8%,较高的绝缘电阻率:ρ≥1.0*1012Ω·cm,介电常数为900~3000,符合X8R标准的电容温度系数,能够满足陶瓷电容器尤其是单层陶瓷电容器制作要求,制备方法简单、易控、环保、成本低廉。
BaTiO3-based X8R ceramic substrate material and preparation method thereof
一种BaTiO3基X8R陶瓷基板材料及其制备方法
TANG BIN (Autor:in) / DAI XINLIN (Autor:in) / SI FENG (Autor:in) / SUN CHENGLI (Autor:in) / ZHONG CHAOWEI (Autor:in) / ZHANG SHUREN (Autor:in)
04.10.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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