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Preparation method of ZnO varistor material
The invention discloses a preparation method of a ZnO varistor material, which comprises the following steps: (1) mixing ZnO with a dopant, carrying out ball milling to obtain ZnO composite powder, granulating, sieving, pressing into a green body, and discharging glue; (2) ZnO is mixed with Bi2O3, Sb2O3 and Co2O3, and sacrificial powder is obtained after ball milling; (3) placing the green body on the upper surface of the sacrificial powder by adopting a lamination method, and carrying out two-step sintering: in the first step, pre-sintering until the temperature is 850-900 DEG C, and recording the temperature as the highest pre-sintering temperature; and the sintering temperature in the second step is 1000-1050 DEG C. A two-step sintering method is adopted, a sintered sample can have a good microstructure, high density and uniform Bi-containing second phase distribution, the sintering temperature can be reduced during final sintering, and the sintering temperature in the second step is 1050 DEG C and is lower than the sintering temperature of 1100 DEG C or above of a common ZnO varistor material.
本发明公开了一种ZnO压敏电阻材料的制备方法,包括以下步骤:(1)将ZnO与掺杂剂混合,经球磨后得到ZnO复合粉体,然后进行造粒、过筛、压制成生坯、排胶;(2)将ZnO与Bi2O3、Sb2O3、Co2O3混合,经球磨后得到牺牲粉;(3)采用叠层法将生坯放置于牺牲粉上表面,进行两步烧结:其中,第一步预烧至温度为850~900℃,记为预烧最高温度;第二步烧结温度为1000~1050℃。本发明采用两步烧结法,能够使烧成的样品具有良好的显微结构、高的致密度以及均匀的含Bi第二相分布,在最终烧结时可降低烧结温度,第二步烧结温度为1050℃,低于一般ZnO压敏电阻材料1100℃以上的烧结温度。
Preparation method of ZnO varistor material
The invention discloses a preparation method of a ZnO varistor material, which comprises the following steps: (1) mixing ZnO with a dopant, carrying out ball milling to obtain ZnO composite powder, granulating, sieving, pressing into a green body, and discharging glue; (2) ZnO is mixed with Bi2O3, Sb2O3 and Co2O3, and sacrificial powder is obtained after ball milling; (3) placing the green body on the upper surface of the sacrificial powder by adopting a lamination method, and carrying out two-step sintering: in the first step, pre-sintering until the temperature is 850-900 DEG C, and recording the temperature as the highest pre-sintering temperature; and the sintering temperature in the second step is 1000-1050 DEG C. A two-step sintering method is adopted, a sintered sample can have a good microstructure, high density and uniform Bi-containing second phase distribution, the sintering temperature can be reduced during final sintering, and the sintering temperature in the second step is 1050 DEG C and is lower than the sintering temperature of 1100 DEG C or above of a common ZnO varistor material.
本发明公开了一种ZnO压敏电阻材料的制备方法,包括以下步骤:(1)将ZnO与掺杂剂混合,经球磨后得到ZnO复合粉体,然后进行造粒、过筛、压制成生坯、排胶;(2)将ZnO与Bi2O3、Sb2O3、Co2O3混合,经球磨后得到牺牲粉;(3)采用叠层法将生坯放置于牺牲粉上表面,进行两步烧结:其中,第一步预烧至温度为850~900℃,记为预烧最高温度;第二步烧结温度为1000~1050℃。本发明采用两步烧结法,能够使烧成的样品具有良好的显微结构、高的致密度以及均匀的含Bi第二相分布,在最终烧结时可降低烧结温度,第二步烧结温度为1050℃,低于一般ZnO压敏电阻材料1100℃以上的烧结温度。
Preparation method of ZnO varistor material
一种ZnO压敏电阻材料的制备方法
22.11.2022
Patent
Elektronische Ressource
Chinesisch
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