Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Silicon nitride ceramic copper-clad plate and preparation process thereof
The invention discloses a silicon nitride ceramic copper-clad plate and a preparation process thereof, and relates to the technical field of semiconductor components, the preparation process comprises the following steps: weighing materials: mixing alpha-Si3N4, beta-Si3N4, SiC and a sintering aid according to a mass ratio of (75-85): (5-15): 5; the preparation method comprises the following steps: mixing the materials, and carrying out wet ball-milling modification on Si3N4 by using graphene to prepare mixed powder; sintering the ceramic, so as to prepare SiC-Si3N4 ceramic; graphene oxide is prepared, and the graphene oxide serves as an adhesive between the copper matrix and the ceramic matrix; preparation of the graphene oxide-based heat-conducting adhesive, wherein the graphene oxide-based heat-conducting adhesive is used for bonding between a copper substrate and a ceramic substrate; graphene oxide is uniformly smeared between the copper plate substrates and the SiC-Si3N4 composite ceramic, and the two copper substrates are compacted and attached to the two sides of the SiC-Si3N4 composite ceramic. By adding SiC and graphene, the heat-conducting property of the Si3N4 ceramic can be improved to a great extent, and by adding SiC which is fibrous, the mechanical property of the Si3N4 ceramic can be improved.
本发明公开了一种氮化硅陶瓷覆铜板及其制备工艺，涉及半导体元器件技术领域，物料称量：将α‑Si3N4、β‑Si3N4、SiC、及烧结助剂按质量比75‑85：5‑15：5；物料混合，利用石墨烯对Si3N4湿法球磨改性，制备混合粉体；陶瓷烧结，制备SiC‑Si3N4陶瓷；制备氧化石墨烯，以氧化石墨烯作为铜基体与陶瓷基体之间的黏结剂；氧化石墨烯基导热胶黏剂的制备，用于在铜基体与陶瓷基体之间的粘结；在铜板基体与SiC‑Si3N4复合陶瓷之间均匀涂抹氧化石墨烯，将两个铜基体压实贴附在SiC‑Si3N4复合陶瓷两侧。加入SiC及石墨烯能够很大程度上提高它的导热性能，而且通过加入SiC，SiC呈纤维状，能够对Si3N4陶瓷的力学性能进行提升。
Silicon nitride ceramic copper-clad plate and preparation process thereof
The invention discloses a silicon nitride ceramic copper-clad plate and a preparation process thereof, and relates to the technical field of semiconductor components, the preparation process comprises the following steps: weighing materials: mixing alpha-Si3N4, beta-Si3N4, SiC and a sintering aid according to a mass ratio of (75-85): (5-15): 5; the preparation method comprises the following steps: mixing the materials, and carrying out wet ball-milling modification on Si3N4 by using graphene to prepare mixed powder; sintering the ceramic, so as to prepare SiC-Si3N4 ceramic; graphene oxide is prepared, and the graphene oxide serves as an adhesive between the copper matrix and the ceramic matrix; preparation of the graphene oxide-based heat-conducting adhesive, wherein the graphene oxide-based heat-conducting adhesive is used for bonding between a copper substrate and a ceramic substrate; graphene oxide is uniformly smeared between the copper plate substrates and the SiC-Si3N4 composite ceramic, and the two copper substrates are compacted and attached to the two sides of the SiC-Si3N4 composite ceramic. By adding SiC and graphene, the heat-conducting property of the Si3N4 ceramic can be improved to a great extent, and by adding SiC which is fibrous, the mechanical property of the Si3N4 ceramic can be improved.
本发明公开了一种氮化硅陶瓷覆铜板及其制备工艺，涉及半导体元器件技术领域，物料称量：将α‑Si3N4、β‑Si3N4、SiC、及烧结助剂按质量比75‑85：5‑15：5；物料混合，利用石墨烯对Si3N4湿法球磨改性，制备混合粉体；陶瓷烧结，制备SiC‑Si3N4陶瓷；制备氧化石墨烯，以氧化石墨烯作为铜基体与陶瓷基体之间的黏结剂；氧化石墨烯基导热胶黏剂的制备，用于在铜基体与陶瓷基体之间的粘结；在铜板基体与SiC‑Si3N4复合陶瓷之间均匀涂抹氧化石墨烯，将两个铜基体压实贴附在SiC‑Si3N4复合陶瓷两侧。加入SiC及石墨烯能够很大程度上提高它的导热性能，而且通过加入SiC，SiC呈纤维状，能够对Si3N4陶瓷的力学性能进行提升。
Silicon nitride ceramic copper-clad plate and preparation process thereof
一种氮化硅陶瓷覆铜板及其制备工艺
LIN WEIYI (Autor:in) / ZHANG CAIGEN (Autor:in) / CHEN ZHI (Autor:in) / LIU WEIPING (Autor:in) / TAN CHENGYE (Autor:in)
16.12.2022
Patent
Elektronische Ressource
Chinesisch
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